WMO10N70EM WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMO10N70EM WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 63W, Type of transistor: N-MOSFET, Technology: WMOS™ EM, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 4.8A, Pulsed drain current: 24A, Power dissipation: 63W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.6Ω, Mounting: SMD, Gate charge: 13.5nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMO10N70EM
Фото | Назва | Виробник | Інформація |
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WMO10N70EM | Виробник : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 63W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Pulsed drain current: 24A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced |
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