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WMO18N70EM WAYON


Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 280mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
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Технічний опис WMO18N70EM WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 8.6A; Idm: 43A; 125W, Type of transistor: N-MOSFET, Technology: WMOS™ EM, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 8.6A, Pulsed drain current: 43A, Power dissipation: 125W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 280mΩ, Mounting: SMD, Gate charge: 26nC, Kind of package: reel; tape, Kind of channel: enhanced.

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WMO18N70EM Виробник : WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 280mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній