WMO26N65C4 WAYON
Виробник: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMO26N65C4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 10.5A, Pulsed drain current: 40A, Power dissipation: 135W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.19Ω, Mounting: SMD, Gate charge: 22.1nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMO26N65C4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| WMO26N65C4 | Виробник : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced |
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