YJS4407A Yangzhou Yangjie Electronic Technology Co.,Ltd
Виробник: Yangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 12A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12A, 20V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V
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Технічний опис YJS4407A Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 12A SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12A, 20V, Power Dissipation (Max): 3.2W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V.
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YJS4407A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 12A SOP-8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12A, 20V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V |
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