ZTX658QSTZ Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS NPN 400V 0.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
Description: TRANS NPN 400V 0.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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Технічний опис ZTX658QSTZ Diodes Incorporated
Description: TRANS NPN 400V 0.5A E-LINE, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: E-Line (TO-92 compatible), Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 1 W.
Інші пропозиції ZTX658QSTZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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ZTX658QSTZ | Виробник : Diodes Incorporated |
 Bipolar Transistors - BJT Pwr Hi Voltage Transistor |
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