Технічний опис ZXM62N03GTA Diodes Incorporated
Description: MOSFET N-CH 30V 3.4A/4.7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 4.7A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V.
Інші пропозиції ZXM62N03GTA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| ZXM62N03GTA |
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на замовлення 20 шт: термін постачання 14-28 дні (днів) |
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ZXM62N03GTA | Виробник : Diodes Inc |
Trans MOSFET N-CH 30V 3.4A 4-Pin(3+Tab) SOT-223 T/R |
товар відсутній |
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ZXM62N03GTA | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 3.4A/4.7A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 4.7A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
товар відсутній |
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ZXM62N03GTA | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 3.4A/4.7A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 4.7A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
товар відсутній |