на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1480+ | 32.11 грн |
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Технічний опис ZXMC4559DN8TC Diodes Zetex
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO.
Інші пропозиції ZXMC4559DN8TC за ціною від 50.94 грн до 50.94 грн
| Фото | Назва | Виробник | Інформація |
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ZXMC4559DN8TC | Виробник : Diodes Zetex |
 Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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ZXMC4559DN8TC | Виробник : Diodes Zetex |
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R |
товар відсутній |
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ZXMC4559DN8TC | Виробник : Diodes Inc |
Trans MOSFET N/P-CH 60V 3.6A/2.6A 8-Pin SOIC T/R |
товар відсутній |
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ZXMC4559DN8TC | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 3.9/-4.7A Power dissipation: 2.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.055/0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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ZXMC4559DN8TC | Виробник : Diodes Incorporated |
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO |
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ZXMC4559DN8TC | Виробник : Diodes Incorporated |
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO |
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ZXMC4559DN8TC | Виробник : Diodes Incorporated |
MOSFET 60V TRENCH MOSFET 20V VGS P-Channel |
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ZXMC4559DN8TC | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 3.9/-4.7A Power dissipation: 2.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.055/0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |