Технічний опис ZXT13N50DE6QTA Diodes Inc
Description: PWR LOW SAT TRANSISTOR SOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 230mV @ 100mA, 4A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V, Frequency - Transition: 115MHz, Supplier Device Package: SOT-26, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.1 W, Qualification: AEC-Q101.
Інші пропозиції ZXT13N50DE6QTA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
ZXT13N50DE6QTA | Виробник : Diodes Incorporated |
 Description: PWR LOW SAT TRANSISTOR SOT26 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 230mV @ 100mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 115MHz Supplier Device Package: SOT-26 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.1 W Qualification: AEC-Q101 |
товар відсутній |
|
| ZXT13N50DE6QTA | Виробник : Diodes Incorporated |
Bipolar Transistors - BJT Pwr Low Sat Transistor SOT26 T&R 3K |
товар відсутній |