Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13063) > Сторінка 168 з 218
Фото | Назва | Виробник | Інформація |
Доступність |
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TK4K1A60F,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V |
на замовлення 82 шт: термін постачання 21-31 дні (днів) |
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4N27(SHORT-TP1,F) | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER TRANS Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Rise / Fall Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
товар відсутній |
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4N27(SHORT,F) | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER TRANS Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Rise / Fall Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
товар відсутній |
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RN2307,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товар відсутній |
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RN2307,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 2655 шт: термін постачання 21-31 дні (днів) |
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RN2307,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2307,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DF2B5BSL,L3F | Toshiba Semiconductor and Storage |
Description: BI-DIRECTIONAL ESD PROTECTION DI Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 11pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 112W Power Line Protection: No Part Status: Active |
товар відсутній |
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DF2B5BSL,L3F | Toshiba Semiconductor and Storage |
Description: BI-DIRECTIONAL ESD PROTECTION DI Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 11pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 112W Power Line Protection: No Part Status: Active |
на замовлення 1532 шт: термін постачання 21-31 дні (днів) |
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DF2B7PCT,L3F | Toshiba Semiconductor and Storage |
Description: BI-DIRECTIONAL ESD PROTECTION DI Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 22V Power - Peak Pulse: 590W Power Line Protection: No |
товар відсутній |
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DF2B7PCT,L3F | Toshiba Semiconductor and Storage |
Description: BI-DIRECTIONAL ESD PROTECTION DI Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 22V Power - Peak Pulse: 590W Power Line Protection: No |
на замовлення 931 шт: термін постачання 21-31 дні (днів) |
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DF2B5PCT,L3F | Toshiba Semiconductor and Storage |
Description: BI-DIRECTIONAL ESD PROTECTION DI Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 41pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 22V Power - Peak Pulse: 590W Power Line Protection: No |
товар відсутній |
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DF2B5PCT,L3F | Toshiba Semiconductor and Storage |
Description: BI-DIRECTIONAL ESD PROTECTION DI Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 41pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 22V Power - Peak Pulse: 590W Power Line Protection: No |
на замовлення 6534 шт: термін постачання 21-31 дні (днів) |
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DF2S5M5CT,L3F | Toshiba Semiconductor and Storage | Description: UNIDIRECTIONAL ESD DIODE VRWM:3. |
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DF2S5M5CT,L3F | Toshiba Semiconductor and Storage | Description: UNIDIRECTIONAL ESD DIODE VRWM:3. |
на замовлення 392 шт: термін постачання 21-31 дні (днів) |
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DF2B18FU,H3XHF | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF2B18FU,H3XHF | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO |
на замовлення 5878 шт: термін постачання 21-31 дні (днів) |
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TLE4276SV | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO ADJ TO220 Packaging: Tube Part Status: Active |
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TCKE800NA,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Supplier Device Package: 10-WSONB (3x3) Part Status: Active |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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TCKE800NA,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Supplier Device Package: 10-WSONB (3x3) Part Status: Active |
на замовлення 39594 шт: термін постачання 21-31 дні (днів) |
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TCKE800NL,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Supplier Device Package: 10-WSONB (3x3) Part Status: Active |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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TCKE800NL,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Supplier Device Package: 10-WSONB (3x3) Part Status: Active |
на замовлення 43734 шт: термін постачання 21-31 дні (днів) |
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TCKE712BNL,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 13.2V Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-WSONB (3x3) Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TCKE712BNL,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 13.2V Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-WSONB (3x3) Part Status: Active |
на замовлення 20276 шт: термін постачання 21-31 дні (днів) |
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TCKE812NA,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Supplier Device Package: 10-WSONB (3x3) Part Status: Active |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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TCKE812NA,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Supplier Device Package: 10-WSONB (3x3) Part Status: Active |
на замовлення 39753 шт: термін постачання 21-31 дні (днів) |
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TCKE812NL,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Supplier Device Package: 10-WSONB (3x3) |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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TCKE812NL,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSON Packaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C Supplier Device Package: 10-WSONB (3x3) |
на замовлення 38257 шт: термін постачання 21-31 дні (днів) |
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TK62Z60X,S1F | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.1mA Supplier Device Package: TO-247-4L(T) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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TLX9188(GBTPL,F | Toshiba Semiconductor and Storage |
Description: TR COUPLER; HIGH VCEO; AECQ; ROH Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.27V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 200V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLX9188(GBTPL,F | Toshiba Semiconductor and Storage |
Description: TR COUPLER; HIGH VCEO; AECQ; ROH Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.27V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 200V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 9032 шт: термін постачання 21-31 дні (днів) |
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MQ01ACF032 | Toshiba Semiconductor and Storage |
Description: 320GB 2.5" SATA III 5V 7.2K RPM Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 9.50mm Memory Size: 320GB Type: SATA III Weight: 3.26 oz (92.89 g) Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V Form Factor: 2.5" Part Status: Active |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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DF2B6M5CT,L3F | Toshiba Semiconductor and Storage |
Description: BIDIRECTIONAL ESD DIODE VRWM:+/- Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 37W Power Line Protection: No |
товар відсутній |
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DF2B6M5CT,L3F | Toshiba Semiconductor and Storage |
Description: BIDIRECTIONAL ESD DIODE VRWM:+/- Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 37W Power Line Protection: No |
на замовлення 8854 шт: термін постачання 21-31 дні (днів) |
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TCR2EE39,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.9V 200MA ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 3.9V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
на замовлення 3525 шт: термін постачання 21-31 дні (днів) |
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TB9080FG | Toshiba Semiconductor and Storage | Description: AUTOMOTIVE MOTOR PRE-DRIVER |
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HN1C01FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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HN1C01FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 7962 шт: термін постачання 21-31 дні (днів) |
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TLP7930(D4-TP1,F | Toshiba Semiconductor and Storage |
Description: IC ISOLATED MODULE 16BIT Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Type: Isolated Module Data Interface: Serial Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 5.5V Resolution (Bits): 16 b Voltage Supply Source: Dual Supply Supplier Device Package: 8-SMD Part Status: Active Number of Channels: 1 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP7930(D4-TP1,F | Toshiba Semiconductor and Storage |
Description: IC ISOLATED MODULE 16BIT Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Type: Isolated Module Data Interface: Serial Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 5.5V Resolution (Bits): 16 b Voltage Supply Source: Dual Supply Supplier Device Package: 8-SMD Part Status: Active Number of Channels: 1 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TA48L018F(TE12L,F) | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.8V 150MA PW-MINI |
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TA48L018F(TE12L,F) | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.8V 150MA PW-MINI |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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RN1707JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4 Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN1707JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4 Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK3R3E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 3.3MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.3mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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SSM6N16FE,L3F | Toshiba Semiconductor and Storage |
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: ES6 Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSM6N16FE,L3F | Toshiba Semiconductor and Storage |
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: ES6 Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DF5A5.6LJE,LM | Toshiba Semiconductor and Storage | Description: TVS DIODE ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DF5A5.6LJE,LM | Toshiba Semiconductor and Storage | Description: TVS DIODE ESV |
на замовлення 7375 шт: термін постачання 21-31 дні (днів) |
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MSZ5V6,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.6VWM 9VC SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: S-Mini Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 155W Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MSZ5V6,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.6VWM 9VC SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: S-Mini Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 155W Power Line Protection: No Part Status: Active |
на замовлення 7270 шт: термін постачання 21-31 дні (днів) |
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CEZ5V6,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.6VWM 9VC ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 155W Power Line Protection: No Part Status: Active |
товар відсутній |
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CEZ5V6,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.6VWM 9VC ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 155W Power Line Protection: No Part Status: Active |
на замовлення 2687 шт: термін постачання 21-31 дні (днів) |
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CUHZ5V6,H3F | Toshiba Semiconductor and Storage |
Description: 5.6 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 860pF @ 1MHz Current - Peak Pulse (10/1000µs): 91A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 5.7V (Typ) Power - Peak Pulse: 1750W (1.75kW) Power Line Protection: No |
товар відсутній |
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CUHZ5V6,H3F | Toshiba Semiconductor and Storage |
Description: 5.6 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 860pF @ 1MHz Current - Peak Pulse (10/1000µs): 91A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 5.7V (Typ) Power - Peak Pulse: 1750W (1.75kW) Power Line Protection: No |
на замовлення 448 шт: термін постачання 21-31 дні (днів) |
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TK090U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=230W F=1MHZ Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.27mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TK090U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=230W F=1MHZ Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.27mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V |
на замовлення 3951 шт: термін постачання 21-31 дні (днів) |
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1SS315[U/D] | Toshiba Semiconductor and Storage | Description: RF DIODE SCHOTTKY 5V USC |
товар відсутній |
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HN1A01FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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HN1A01FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Part Status: Active |
на замовлення 7702 шт: термін постачання 21-31 дні (днів) |
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TK4K1A60F,S4X |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
на замовлення 82 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.44 грн |
10+ | 51.05 грн |
4N27(SHORT-TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
товар відсутній
4N27(SHORT,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
товар відсутній
RN2307,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
RN2307,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 2655 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.65 грн |
35+ | 8.06 грн |
100+ | 4.32 грн |
500+ | 3.18 грн |
1000+ | 2.21 грн |
RN2307,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.6 грн |
6000+ | 4.23 грн |
RN2307,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.49 грн |
17+ | 17.25 грн |
100+ | 8.7 грн |
500+ | 6.66 грн |
1000+ | 4.94 грн |
DF2B5BSL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
товар відсутній
DF2B5BSL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
на замовлення 1532 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 13.11 грн |
32+ | 8.91 грн |
100+ | 4.32 грн |
500+ | 3.38 грн |
1000+ | 2.35 грн |
DF2B7PCT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
товар відсутній
DF2B7PCT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
на замовлення 931 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.39 грн |
22+ | 13.32 грн |
100+ | 6.51 грн |
500+ | 5.1 грн |
DF2B5PCT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
товар відсутній
DF2B5PCT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
на замовлення 6534 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.39 грн |
22+ | 13.32 грн |
100+ | 6.51 грн |
500+ | 5.1 грн |
1000+ | 3.54 грн |
2000+ | 3.07 грн |
5000+ | 2.8 грн |
DF2S5M5CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:3.
Description: UNIDIRECTIONAL ESD DIODE VRWM:3.
товар відсутній
DF2S5M5CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:3.
Description: UNIDIRECTIONAL ESD DIODE VRWM:3.
на замовлення 392 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.21 грн |
16+ | 18.44 грн |
100+ | 10.47 грн |
DF2B18FU,H3XHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.26 грн |
DF2B18FU,H3XHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
на замовлення 5878 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.4 грн |
14+ | 20.27 грн |
100+ | 11.47 грн |
500+ | 7.13 грн |
1000+ | 5.47 грн |
TLE4276SV |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO ADJ TO220
Packaging: Tube
Part Status: Active
Description: IC REG LINEAR LDO ADJ TO220
Packaging: Tube
Part Status: Active
товар відсутній
TCKE800NA,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 45.84 грн |
8000+ | 42.51 грн |
12000+ | 40.87 грн |
TCKE800NA,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
на замовлення 39594 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.49 грн |
10+ | 86.67 грн |
25+ | 81.73 грн |
100+ | 65.36 грн |
250+ | 61.37 грн |
500+ | 53.7 грн |
1000+ | 43.77 грн |
TCKE800NL,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 46.48 грн |
8000+ | 43.1 грн |
12000+ | 41.45 грн |
TCKE800NL,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
на замовлення 43734 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.95 грн |
10+ | 87.86 грн |
25+ | 82.88 грн |
100+ | 66.27 грн |
250+ | 62.23 грн |
500+ | 54.45 грн |
1000+ | 44.38 грн |
TCKE712BNL,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 50.43 грн |
8000+ | 46.76 грн |
12000+ | 44.96 грн |
TCKE712BNL,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
на замовлення 20276 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 109.96 грн |
10+ | 95.3 грн |
25+ | 89.92 грн |
100+ | 71.9 грн |
250+ | 67.51 грн |
500+ | 59.07 грн |
1000+ | 48.14 грн |
TCKE812NA,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 46.48 грн |
8000+ | 43.1 грн |
12000+ | 41.45 грн |
TCKE812NA,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
на замовлення 39753 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.95 грн |
10+ | 87.86 грн |
25+ | 82.88 грн |
100+ | 66.27 грн |
250+ | 62.23 грн |
500+ | 54.45 грн |
1000+ | 44.38 грн |
TCKE812NL,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 45.84 грн |
8000+ | 42.51 грн |
12000+ | 40.87 грн |
TCKE812NL,RF |
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
на замовлення 38257 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.49 грн |
10+ | 86.67 грн |
25+ | 81.73 грн |
100+ | 65.36 грн |
250+ | 61.37 грн |
500+ | 53.7 грн |
1000+ | 43.77 грн |
TK62Z60X,S1F |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1271.42 грн |
10+ | 1125.46 грн |
TLX9188(GBTPL,F |
Виробник: Toshiba Semiconductor and Storage
Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 97.84 грн |
6000+ | 92.37 грн |
TLX9188(GBTPL,F |
Виробник: Toshiba Semiconductor and Storage
Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 9032 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 227.92 грн |
10+ | 155.18 грн |
100+ | 127.1 грн |
500+ | 100.55 грн |
1000+ | 92.23 грн |
MQ01ACF032 |
Виробник: Toshiba Semiconductor and Storage
Description: 320GB 2.5" SATA III 5V 7.2K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
Description: 320GB 2.5" SATA III 5V 7.2K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
на замовлення 29 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4942.25 грн |
10+ | 4313.15 грн |
25+ | 4164.42 грн |
DF2B6M5CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
товар відсутній
DF2B6M5CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
на замовлення 8854 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.04 грн |
13+ | 21.6 грн |
100+ | 10.94 грн |
500+ | 8.37 грн |
1000+ | 6.21 грн |
2000+ | 5.23 грн |
5000+ | 4.91 грн |
TCR2EE39,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.9V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.9V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.9V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
на замовлення 3525 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.03 грн |
17+ | 17.04 грн |
25+ | 14.92 грн |
100+ | 9.06 грн |
250+ | 7.5 грн |
500+ | 6 грн |
1000+ | 4.52 грн |
TB9080FG |
Виробник: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE MOTOR PRE-DRIVER
Description: AUTOMOTIVE MOTOR PRE-DRIVER
товар відсутній
HN1C01FE-GR,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 4.52 грн |
HN1C01FE-GR,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 7962 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.49 грн |
17+ | 16.97 грн |
100+ | 8.55 грн |
500+ | 6.55 грн |
1000+ | 4.86 грн |
2000+ | 4.09 грн |
TLP7930(D4-TP1,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC ISOLATED MODULE 16BIT
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SMD
Part Status: Active
Number of Channels: 1
Description: IC ISOLATED MODULE 16BIT
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SMD
Part Status: Active
Number of Channels: 1
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 223.37 грн |
TLP7930(D4-TP1,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC ISOLATED MODULE 16BIT
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SMD
Part Status: Active
Number of Channels: 1
Description: IC ISOLATED MODULE 16BIT
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SMD
Part Status: Active
Number of Channels: 1
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 450.02 грн |
10+ | 314.36 грн |
100+ | 259.77 грн |
500+ | 213.5 грн |
TA48L018F(TE12L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 150MA PW-MINI
Description: IC REG LINEAR 1.8V 150MA PW-MINI
товар відсутній
TA48L018F(TE12L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 150MA PW-MINI
Description: IC REG LINEAR 1.8V 150MA PW-MINI
на замовлення 16 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 50.25 грн |
10+ | 42.84 грн |
RN1707JE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 5.4 грн |
RN1707JE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.13 грн |
14+ | 20.83 грн |
100+ | 11.78 грн |
500+ | 7.32 грн |
1000+ | 5.61 грн |
2000+ | 4.88 грн |
TK3R3E08QM,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 3.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Description: UMOS10 TO-220AB 80V 3.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 160.2 грн |
10+ | 138.91 грн |
100+ | 111.64 грн |
SSM6N16FE,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 4.25 грн |
SSM6N16FE,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.49 грн |
16+ | 18.16 грн |
100+ | 10.3 грн |
500+ | 6.4 грн |
1000+ | 4.91 грн |
2000+ | 4.27 грн |
DF5A5.6LJE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Description: TVS DIODE ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 4.67 грн |
DF5A5.6LJE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Description: TVS DIODE ESV
на замовлення 7375 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.21 грн |
14+ | 21.04 грн |
100+ | 11.14 грн |
500+ | 6.88 грн |
1000+ | 4.68 грн |
2000+ | 4.22 грн |
MSZ5V6,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.6VWM 9VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.71 грн |
MSZ5V6,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.6VWM 9VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
на замовлення 7270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.85 грн |
20+ | 14.59 грн |
100+ | 7.12 грн |
500+ | 5.57 грн |
1000+ | 3.87 грн |
CEZ5V6,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.6VWM 9VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
товар відсутній
CEZ5V6,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.6VWM 9VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
на замовлення 2687 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.39 грн |
21+ | 13.39 грн |
100+ | 6.55 грн |
500+ | 5.13 грн |
1000+ | 3.56 грн |
2000+ | 3.09 грн |
CUHZ5V6,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: 5.6 V ZENER DIODE, SOD-323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 860pF @ 1MHz
Current - Peak Pulse (10/1000µs): 91A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 1750W (1.75kW)
Power Line Protection: No
Description: 5.6 V ZENER DIODE, SOD-323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 860pF @ 1MHz
Current - Peak Pulse (10/1000µs): 91A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 1750W (1.75kW)
Power Line Protection: No
товар відсутній
CUHZ5V6,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: 5.6 V ZENER DIODE, SOD-323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 860pF @ 1MHz
Current - Peak Pulse (10/1000µs): 91A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 1750W (1.75kW)
Power Line Protection: No
Description: 5.6 V ZENER DIODE, SOD-323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 860pF @ 1MHz
Current - Peak Pulse (10/1000µs): 91A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 1750W (1.75kW)
Power Line Protection: No
на замовлення 448 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.86 грн |
14+ | 20.48 грн |
100+ | 10.32 грн |
TK090U65Z,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=230W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Description: DTMOS VI TOLL PD=230W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 200.84 грн |
TK090U65Z,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=230W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Description: DTMOS VI TOLL PD=230W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
на замовлення 3951 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 400.51 грн |
10+ | 346.12 грн |
100+ | 283.56 грн |
500+ | 226.54 грн |
1000+ | 191.05 грн |
1SS315[U/D] |
Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 5V USC
Description: RF DIODE SCHOTTKY 5V USC
товар відсутній
HN1A01FE-GR,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 11.63 грн |
HN1A01FE-GR,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
на замовлення 7702 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.77 грн |
11+ | 27.07 грн |
100+ | 20.22 грн |
500+ | 14.91 грн |
1000+ | 11.52 грн |
2000+ | 10.51 грн |