Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (285) > Сторінка 1 з 5
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DG10X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 19A; 196W; TO220 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 19A Pulsed collector current: 30A Turn-on time: 21ns Turn-off time: 208ns Type of transistor: IGBT Power dissipation: 196W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 70nC Mounting: THT Case: TO220 |
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DG10X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 19A; 196W; TO220 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 19A Pulsed collector current: 30A Turn-on time: 21ns Turn-off time: 208ns Type of transistor: IGBT Power dissipation: 196W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 70nC Mounting: THT Case: TO220 кількість в упаковці: 1 шт |
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 10A; 96W; TO247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 30A Turn-on time: 37ns Turn-off time: 493ns Type of transistor: IGBT Power dissipation: 96W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 80nC Mounting: THT Case: TO247 |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 10A; 96W; TO247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 30A Turn-on time: 37ns Turn-off time: 493ns Type of transistor: IGBT Power dissipation: 96W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 80nC Mounting: THT Case: TO247 кількість в упаковці: 1 шт |
на замовлення 58 шт: термін постачання 7-14 дні (днів) |
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DG120X07T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Turn-on time: 282ns Turn-off time: 334ns Type of transistor: IGBT Power dissipation: 893W Case: TO247PLUS Kind of package: tube Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.86µC |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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DG120X07T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Turn-on time: 282ns Turn-off time: 334ns Type of transistor: IGBT Power dissipation: 893W Case: TO247PLUS Kind of package: tube Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.86µC кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 7-14 дні (днів) |
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DG15X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 24A; 235W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 235W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.1µC Kind of package: tube Turn-on time: 23ns Turn-off time: 208ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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DG15X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 24A; 235W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 235W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.1µC Kind of package: tube Turn-on time: 23ns Turn-off time: 208ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 73 шт: термін постачання 7-14 дні (днів) |
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector current: 15A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 103ns Turn-off time: 484ns Collector-emitter voltage: 1200V Power dissipation: 138W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.12µC |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector current: 15A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 103ns Turn-off time: 484ns Collector-emitter voltage: 1200V Power dissipation: 138W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.12µC кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 7-14 дні (днів) |
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DG20X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 313W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 313W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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DG20X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 313W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 313W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 61 шт: термін постачання 7-14 дні (днів) |
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DG20X06T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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DG20X06T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 7-14 дні (днів) |
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 348W; TO247 Kind of package: tube Turn-off time: 362ns Type of transistor: IGBT Power dissipation: 348W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.19µC Mounting: THT Case: TO247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 75A Turn-on time: 36ns |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 348W; TO247 Kind of package: tube Turn-off time: 362ns Type of transistor: IGBT Power dissipation: 348W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.19µC Mounting: THT Case: TO247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 75A Turn-on time: 36ns кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 7-14 дні (днів) |
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DG30X07T2 | STARPOWER SEMICONDUCTOR | DG30X07T2 THT IGBT transistors |
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 120A Turn-on time: 198ns Turn-off time: 668ns Collector-emitter voltage: 1200V Power dissipation: 468W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.27µC |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 120A Turn-on time: 198ns Turn-off time: 668ns Collector-emitter voltage: 1200V Power dissipation: 468W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.27µC кількість в упаковці: 1 шт |
на замовлення 59 шт: термін постачання 7-14 дні (днів) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector current: 50A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 172ns Turn-off time: 338ns Collector-emitter voltage: 1200V Power dissipation: 672W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.37µC |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector current: 50A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 172ns Turn-off time: 338ns Collector-emitter voltage: 1200V Power dissipation: 672W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.37µC кількість в упаковці: 1 шт |
на замовлення 70 шт: термін постачання 7-14 дні (днів) |
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DG50X07T2 | STARPOWER SEMICONDUCTOR | DG50X07T2 THT IGBT transistors |
на замовлення 56 шт: термін постачання 7-14 дні (днів) |
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DG50X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS Type of transistor: IGBT Collector current: 50A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 180ns Turn-off time: 607ns Collector-emitter voltage: 1200V Power dissipation: 592W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.35µC |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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DG50X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS Type of transistor: IGBT Collector current: 50A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 180ns Turn-off time: 607ns Collector-emitter voltage: 1200V Power dissipation: 592W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.35µC кількість в упаковці: 1 шт |
на замовлення 78 шт: термін постачання 7-14 дні (днів) |
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DG75H12T2 | STARPOWER SEMICONDUCTOR | DG75H12T2 THT IGBT transistors |
на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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DG75X07T2L | STARPOWER SEMICONDUCTOR | DG75X07T2L THT IGBT transistors |
на замовлення 36 шт: термін постачання 7-14 дні (днів) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector current: 75A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 225A Turn-on time: 163ns Turn-off time: 559ns Collector-emitter voltage: 1200V Power dissipation: 852W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.49µC |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector current: 75A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 225A Turn-on time: 163ns Turn-off time: 559ns Collector-emitter voltage: 1200V Power dissipation: 852W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.49µC кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 7-14 дні (днів) |
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GD1000HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 1kA Case: P2.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2kA Technology: Trench FS IGBT Mechanical mounting: screw |
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GD1000HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 1kA Case: P2.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2kA Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 8 шт |
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GD100FFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
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GD100FFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 10 шт |
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GD100FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 100A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
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GD100FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 100A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
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GD100FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 100A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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GD100FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 100A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
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GD100FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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GD100FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 10 шт |
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GD100HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
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GD100HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
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GD100HFU120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C8 48mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
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GD100HFU120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C8 48mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw кількість в упаковці: 16 шт |
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GD100HFX170C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
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GD100HFX170C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 24 шт |
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GD100HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
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GD100HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 24 шт |
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GD100HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товар відсутній |
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GD100HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 24 шт |
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GD100HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товар відсутній |
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GD100HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw кількість в упаковці: 10 шт |
товар відсутній |
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GD100MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Collector current: 100A Case: L3.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
товар відсутній |
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GD100MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Collector current: 100A Case: L3.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 16 шт |
товар відсутній |
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GD100PIX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
товар відсутній |
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GD100PIX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 10 шт |
товар відсутній |
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GD100PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товар відсутній |
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GD100PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 10 шт |
товар відсутній |
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GD100SGY120D6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 100A Case: D6 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товар відсутній |
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GD100SGY120D6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 100A Case: D6 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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GD10PJX65F1S | STARPOWER SEMICONDUCTOR | GD10PJX65F1S IGBT modules |
товар відсутній |
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GD10PJX65L2S | STARPOWER SEMICONDUCTOR | GD10PJX65L2S IGBT modules |
товар відсутній |
DG10X06T1 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
товар відсутній
DG10X06T1 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
кількість в упаковці: 1 шт
товар відсутній
DG10X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
на замовлення 58 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 130.08 грн |
8+ | 101.71 грн |
22+ | 96.18 грн |
DG10X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 187.78 грн |
3+ | 162.1 грн |
8+ | 122.06 грн |
22+ | 115.41 грн |
DG120X07T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
на замовлення 18 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 792.85 грн |
2+ | 516.88 грн |
5+ | 488.51 грн |
DG120X07T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 951.42 грн |
2+ | 644.11 грн |
5+ | 586.21 грн |
DG15X06T1 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 73 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 111.03 грн |
5+ | 92.72 грн |
12+ | 68.5 грн |
32+ | 65.04 грн |
DG15X06T1 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 73 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 133.23 грн |
5+ | 115.54 грн |
12+ | 82.2 грн |
32+ | 78.05 грн |
DG15X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 198.96 грн |
3+ | 166.06 грн |
7+ | 124.55 грн |
18+ | 117.63 грн |
DG15X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 238.75 грн |
3+ | 206.94 грн |
7+ | 149.46 грн |
18+ | 141.15 грн |
DG20X06T1 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 61 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 125.19 грн |
5+ | 104.48 грн |
11+ | 78.19 грн |
29+ | 74.04 грн |
DG20X06T1 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 61 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 150.22 грн |
5+ | 130.2 грн |
11+ | 93.83 грн |
29+ | 88.84 грн |
DG20X06T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 116.25 грн |
10+ | 86.49 грн |
DG20X06T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 167.21 грн |
3+ | 144.86 грн |
10+ | 103.79 грн |
26+ | 97.98 грн |
DG25X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 264.53 грн |
3+ | 220.73 грн |
5+ | 176.44 грн |
DG25X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 317.44 грн |
3+ | 275.06 грн |
5+ | 211.73 грн |
13+ | 200.11 грн |
DG40X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
на замовлення 59 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 361.4 грн |
3+ | 302.38 грн |
4+ | 224.88 грн |
10+ | 212.42 грн |
DG40X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
кількість в упаковці: 1 шт
на замовлення 59 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 433.68 грн |
3+ | 376.81 грн |
4+ | 269.85 грн |
10+ | 254.91 грн |
DG50Q12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
на замовлення 70 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 628.92 грн |
2+ | 390.25 грн |
6+ | 368.8 грн |
DG50Q12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 754.7 грн |
2+ | 486.31 грн |
6+ | 442.56 грн |
DG50X07T2 |
Виробник: STARPOWER SEMICONDUCTOR
DG50X07T2 THT IGBT transistors
DG50X07T2 THT IGBT transistors
на замовлення 56 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 321.02 грн |
5+ | 198.45 грн |
14+ | 187.65 грн |
DG50X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
на замовлення 78 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 564.83 грн |
3+ | 350.12 грн |
7+ | 330.75 грн |
DG50X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
кількість в упаковці: 1 шт
на замовлення 78 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 677.8 грн |
3+ | 436.3 грн |
7+ | 396.89 грн |
DG75H12T2 |
Виробник: STARPOWER SEMICONDUCTOR
DG75H12T2 THT IGBT transistors
DG75H12T2 THT IGBT transistors
на замовлення 30 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 779.74 грн |
3+ | 474.11 грн |
6+ | 448.37 грн |
DG75X07T2L |
Виробник: STARPOWER SEMICONDUCTOR
DG75X07T2L THT IGBT transistors
DG75X07T2L THT IGBT transistors
на замовлення 36 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 565.13 грн |
3+ | 350.4 грн |
8+ | 331.3 грн |
DG75X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 738.45 грн |
2+ | 458.06 грн |
3+ | 457.37 грн |
5+ | 432.46 грн |
DG75X12T2 |
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 886.15 грн |
2+ | 570.81 грн |
3+ | 548.84 грн |
5+ | 518.95 грн |
GD1000HFX170P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD1000HFX170P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
товар відсутній
GD100FFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100HFU120C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HFU120C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
товар відсутній
GD100HFX170C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFX170C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HHU120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HHU120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
товар відсутній
GD100PIX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100PIX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100SGY120D6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100SGY120D6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній