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TK5P53D(T6RSS-Q) TK5P53D(T6RSS-Q) Toshiba Semiconductor and Storage TK5P53D_datasheet_en_20150803.pdf?did=2315&prodName=TK5P53D Description: MOSFET N-CH 525V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
товар відсутній
TK5P53D(T6RSS-Q) TK5P53D(T6RSS-Q) Toshiba Semiconductor and Storage TK5P53D_datasheet_en_20150803.pdf?did=2315&prodName=TK5P53D Description: MOSFET N-CH 525V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 1997 шт:
термін постачання 21-31 дні (днів)
4+88.09 грн
10+ 69.01 грн
100+ 53.66 грн
500+ 42.68 грн
1000+ 34.77 грн
Мінімальне замовлення: 4
TK6P53D(T6RSS-Q) TK6P53D(T6RSS-Q) Toshiba Semiconductor and Storage TK6P53D_datasheet_en_20131101.pdf?did=2322&prodName=TK6P53D Description: MOSFET N-CH 525V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
товар відсутній
TK6P53D(T6RSS-Q) TK6P53D(T6RSS-Q) Toshiba Semiconductor and Storage TK6P53D_datasheet_en_20131101.pdf?did=2322&prodName=TK6P53D Description: MOSFET N-CH 525V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
4+93.32 грн
10+ 73.69 грн
100+ 57.27 грн
500+ 45.56 грн
1000+ 37.11 грн
Мінімальне замовлення: 4
TC74HC32AF(EL,F) TC74HC32AF(EL,F) Toshiba Semiconductor and Storage Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товар відсутній
TC74HC32AF(EL,F) TC74HC32AF(EL,F) Toshiba Semiconductor and Storage Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товар відсутній
TPW5200FNH,L1Q Toshiba Semiconductor and Storage TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
товар відсутній
TPW5200FNH,L1Q Toshiba Semiconductor and Storage TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
на замовлення 4826 шт:
термін постачання 21-31 дні (днів)
2+195.59 грн
10+ 156.21 грн
100+ 124.3 грн
500+ 98.71 грн
1000+ 83.75 грн
2000+ 79.57 грн
Мінімальне замовлення: 2
7UL1T08FU,LF 7UL1T08FU,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.52 грн
Мінімальне замовлення: 3000
7UL1T08FU,LF 7UL1T08FU,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 8089 шт:
термін постачання 21-31 дні (днів)
11+29.11 грн
14+ 21.21 грн
25+ 18.6 грн
100+ 11.29 грн
250+ 9.35 грн
500+ 7.48 грн
1000+ 5.64 грн
Мінімальне замовлення: 11
TLP5222(TP,E TLP5222(TP,E Toshiba Semiconductor and Storage TLP5222_datasheet_en_20220722.pdf?did=143287&prodName=TLP5222 Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.67V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 58ns, 57ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+237.62 грн
Мінімальне замовлення: 1500
TLP5222(TP,E TLP5222(TP,E Toshiba Semiconductor and Storage TLP5222_datasheet_en_20220722.pdf?did=143287&prodName=TLP5222 Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.67V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 58ns, 57ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+478.53 грн
10+ 334.43 грн
100+ 276.35 грн
500+ 227.13 грн
DF2B6M5SL,L3F DF2B6M5SL,L3F Toshiba Semiconductor and Storage DF2B6M5SL_datasheet_en_20191217.pdf?did=60620&prodName=DF2B6M5SL Description: TVS DIODE 5VWM 26.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 26.5V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
товар відсутній
DF2B6M5SL,L3F DF2B6M5SL,L3F Toshiba Semiconductor and Storage DF2B6M5SL_datasheet_en_20191217.pdf?did=60620&prodName=DF2B6M5SL Description: TVS DIODE 5VWM 26.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 26.5V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
на замовлення 5010 шт:
термін постачання 21-31 дні (днів)
13+24.64 грн
18+ 16.17 грн
100+ 7.89 грн
500+ 6.18 грн
1000+ 4.29 грн
2000+ 3.72 грн
5000+ 3.39 грн
Мінімальне замовлення: 13
TLP2761(D4-TP,E TLP2761(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=28819&prodName=TLP2761 Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+28.66 грн
3000+ 26.22 грн
Мінімальне замовлення: 1500
TLP2761(D4-TP,E TLP2761(D4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=28819&prodName=TLP2761 Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 4345 шт:
термін постачання 21-31 дні (днів)
4+81.37 грн
10+ 49.24 грн
100+ 36.48 грн
500+ 31.45 грн
Мінімальне замовлення: 4
TLP2768A(TP,E TLP2768A(TP,E Toshiba Semiconductor and Storage Description: ZSOL6ICTST20M,ACTIVE,
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
TLP2768A(TP,E TLP2768A(TP,E Toshiba Semiconductor and Storage Description: ZSOL6ICTST20M,ACTIVE,
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
4+94.06 грн
10+ 56.94 грн
100+ 42.17 грн
500+ 36.37 грн
Мінімальне замовлення: 4
TLP2735(TP,E TLP2735(TP,E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+43.86 грн
Мінімальне замовлення: 1500
TLP2735(TP,E TLP2735(TP,E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
3+123.92 грн
10+ 75.41 грн
100+ 55.81 грн
500+ 48.13 грн
Мінімальне замовлення: 3
TLP2735(D4-TP,E TLP2735(D4-TP,E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
товар відсутній
TLP2735(D4-TP,E TLP2735(D4-TP,E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
на замовлення 1470 шт:
термін постачання 21-31 дні (днів)
3+123.92 грн
10+ 75.41 грн
100+ 55.81 грн
500+ 48.13 грн
Мінімальне замовлення: 3
TLP2719(D4-TP,E Toshiba Semiconductor and Storage TLP2719_datasheet_en_20180521.pdf?did=61847&prodName=TLP2719 Description: OPTOCOUPLER SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
товар відсутній
TLP2719(D4-TP,E Toshiba Semiconductor and Storage TLP2719_datasheet_en_20180521.pdf?did=61847&prodName=TLP2719 Description: OPTOCOUPLER SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 473 шт:
термін постачання 21-31 дні (днів)
3+117.21 грн
10+ 71.39 грн
100+ 52.84 грн
Мінімальне замовлення: 3
TLP2770(D4-TP,E TLP2770(D4-TP,E Toshiba Semiconductor and Storage TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770 Description: OPTOISO 5KV TRI-STATE S06L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+60.22 грн
Мінімальне замовлення: 1500
TLP2770(D4-TP,E TLP2770(D4-TP,E Toshiba Semiconductor and Storage TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770 Description: OPTOISO 5KV TRI-STATE S06L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+150.8 грн
10+ 96.98 грн
100+ 74.65 грн
500+ 63.32 грн
Мінімальне замовлення: 2
TLP2735(E TLP2735(E Toshiba Semiconductor and Storage TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735 Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
3+123.92 грн
10+ 75.41 грн
125+ 55.81 грн
Мінімальне замовлення: 3
RN1423TE85LF RN1423TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.79 грн
Мінімальне замовлення: 3000
RN1423TE85LF RN1423TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 5822 шт:
термін постачання 21-31 дні (днів)
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1424TE85LF RN1424TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.79 грн
Мінімальне замовлення: 3000
RN1424TE85LF RN1424TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 5280 шт:
термін постачання 21-31 дні (днів)
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1422TE85LF RN1422TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+6.79 грн
6000+ 6.39 грн
9000+ 5.66 грн
Мінімальне замовлення: 3000
RN1422TE85LF RN1422TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1421TE85LF RN1421TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
товар відсутній
RN1421TE85LF RN1421TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 2591 шт:
термін постачання 21-31 дні (днів)
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1425TE85LF RN1425TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
RN1425TE85LF RN1425TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 1880 шт:
термін постачання 21-31 дні (днів)
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1426TE85LF RN1426TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
RN1426TE85LF RN1426TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 993 шт:
термін постачання 21-31 дні (днів)
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
Мінімальне замовлення: 10
74LVC2T45FK,LF(CB 74LVC2T45FK,LF(CB Toshiba Semiconductor and Storage Description: 1-BITX2 DUAL SUPPLYTRANSCVR,SOT-
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Supplier Device Package: US8
Output Type: Tri-State
Operating Temperature: -40°C ~ 125°C (TA)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+9.73 грн
6000+ 8.8 грн
Мінімальне замовлення: 3000
74LVC2T45FK,LF(CB 74LVC2T45FK,LF(CB Toshiba Semiconductor and Storage Description: 1-BITX2 DUAL SUPPLYTRANSCVR,SOT-
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Supplier Device Package: US8
Output Type: Tri-State
Operating Temperature: -40°C ~ 125°C (TA)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
9+34.34 грн
11+ 26.67 грн
25+ 24.44 грн
100+ 17.06 грн
250+ 15.45 грн
500+ 12.79 грн
1000+ 9.44 грн
Мінімальне замовлення: 9
HDEPZ11GEA51 Toshiba Semiconductor and Storage Description: LINEAR IC
Packaging: Bulk
товар відсутній
HDEPZ11GEB51 Toshiba Semiconductor and Storage Description: LINEAR IC
Packaging: Bulk
товар відсутній
1N4148WS,H3F(B 1N4148WS,H3F(B Toshiba Semiconductor and Storage Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: USC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.13 грн
Мінімальне замовлення: 3000
1N4148WS,H3F(B 1N4148WS,H3F(B Toshiba Semiconductor and Storage Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: USC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 5844 шт:
термін постачання 21-31 дні (днів)
25+11.94 грн
28+ 10.57 грн
29+ 10.06 грн
100+ 5.4 грн
250+ 4 грн
500+ 3.32 грн
1000+ 2.23 грн
Мінімальне замовлення: 25
TC74VCX08FTEL TC74VCX08FTEL Toshiba Semiconductor and Storage TC74VCX08FT_datasheet_en_20210518.pdf?did=21832&prodName=TC74VCX08FT Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
товар відсутній
TK40S06N1L,LQ TK40S06N1L,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
5+60.47 грн
10+ 47.37 грн
100+ 36.82 грн
500+ 29.29 грн
Мінімальне замовлення: 5
TPH6R004PL,LQ TPH6R004PL,LQ Toshiba Semiconductor and Storage TPH6R004PL_datasheet_en_20170525.pdf?did=55294&prodName=TPH6R004PL Description: MOSFET N-CH 40V 87A/49A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
товар відсутній
TPH6R004PL,LQ TPH6R004PL,LQ Toshiba Semiconductor and Storage TPH6R004PL_datasheet_en_20170525.pdf?did=55294&prodName=TPH6R004PL Description: MOSFET N-CH 40V 87A/49A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)
6+52.26 грн
10+ 43.42 грн
100+ 30.04 грн
500+ 23.55 грн
1000+ 20.05 грн
Мінімальне замовлення: 6
TK16V60W5,LVQ Toshiba Semiconductor and Storage TK16V60W5_datasheet_en_20150115.pdf?did=15636&prodName=TK16V60W5 Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+110.46 грн
Мінімальне замовлення: 2500
TK16V60W5,LVQ Toshiba Semiconductor and Storage TK16V60W5_datasheet_en_20150115.pdf?did=15636&prodName=TK16V60W5 Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+226.95 грн
10+ 183.46 грн
100+ 148.41 грн
500+ 123.81 грн
1000+ 106.01 грн
Мінімальне замовлення: 2
MS21X14X4.5W MS21X14X4.5W Toshiba Semiconductor and Storage e_amo02_2014.pdf Description: FERRITE CORE SOLID 12.8MM
Packaging: Bag
Mounting Type: Free Hanging
Length: 0.260" (6.60mm)
Type: Round
Design: Solid
Inner Dimension: 0.504" Dia (12.80mm)
Outer Dimension: 0.898" Dia (22.80mm)
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
1+342.66 грн
10+ 282.67 грн
25+ 275.94 грн
50+ 252.64 грн
100+ 189.48 грн
250+ 183.17 грн
500+ 173.95 грн
1000+ 165.25 грн
1N4148WT,L3F(B Toshiba Semiconductor and Storage Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+1.66 грн
16000+ 1.39 грн
Мінімальне замовлення: 8000
1N4148WT,L3F(B Toshiba Semiconductor and Storage Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
29+10.45 грн
32+ 9.06 грн
34+ 8.66 грн
100+ 4.66 грн
250+ 3.45 грн
500+ 2.86 грн
1000+ 1.92 грн
2500+ 1.63 грн
Мінімальне замовлення: 29
1N4148WT,H3F(B Toshiba Semiconductor and Storage Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+1.84 грн
Мінімальне замовлення: 4000
1N4148WT,H3F(B Toshiba Semiconductor and Storage Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 7970 шт:
термін постачання 21-31 дні (днів)
29+10.45 грн
32+ 9.06 грн
34+ 8.66 грн
100+ 4.66 грн
250+ 3.45 грн
500+ 2.86 грн
1000+ 1.92 грн
Мінімальне замовлення: 29
TLP241BP(D4TP1,E(O Toshiba Semiconductor and Storage Description: PHOTORELAY; OVP; OTP; VDE, SURFA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
товар відсутній
TLP241BP(D4TP1,E(O Toshiba Semiconductor and Storage Description: PHOTORELAY; OVP; OTP; VDE, SURFA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
на замовлення 1460 шт:
термін постачання 21-31 дні (днів)
2+220.23 грн
10+ 141.33 грн
100+ 108.75 грн
500+ 92.25 грн
Мінімальне замовлення: 2
TLP241BP(D4,E(O Toshiba Semiconductor and Storage Description: PHOTORELAY; OVP; OTP; VDE, THROU
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1.4 A
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
2+220.23 грн
10+ 141.33 грн
100+ 108.75 грн
Мінімальне замовлення: 2
TLP170J(TP,F) TLP170J(TP,F) Toshiba Semiconductor and Storage TLP170J_datasheet_en_20190617.pdf?did=324&prodName=TLP170J Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 90 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
товар відсутній
TK5P53D(T6RSS-Q) TK5P53D_datasheet_en_20150803.pdf?did=2315&prodName=TK5P53D
TK5P53D(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
товар відсутній
TK5P53D(T6RSS-Q) TK5P53D_datasheet_en_20150803.pdf?did=2315&prodName=TK5P53D
TK5P53D(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 1997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+88.09 грн
10+ 69.01 грн
100+ 53.66 грн
500+ 42.68 грн
1000+ 34.77 грн
Мінімальне замовлення: 4
TK6P53D(T6RSS-Q) TK6P53D_datasheet_en_20131101.pdf?did=2322&prodName=TK6P53D
TK6P53D(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
товар відсутній
TK6P53D(T6RSS-Q) TK6P53D_datasheet_en_20131101.pdf?did=2322&prodName=TK6P53D
TK6P53D(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+93.32 грн
10+ 73.69 грн
100+ 57.27 грн
500+ 45.56 грн
1000+ 37.11 грн
Мінімальне замовлення: 4
TC74HC32AF(EL,F)
TC74HC32AF(EL,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товар відсутній
TC74HC32AF(EL,F)
TC74HC32AF(EL,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товар відсутній
TPW5200FNH,L1Q TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
товар відсутній
TPW5200FNH,L1Q TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
на замовлення 4826 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+195.59 грн
10+ 156.21 грн
100+ 124.3 грн
500+ 98.71 грн
1000+ 83.75 грн
2000+ 79.57 грн
Мінімальне замовлення: 2
7UL1T08FU,LF
7UL1T08FU,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.52 грн
Мінімальне замовлення: 3000
7UL1T08FU,LF
7UL1T08FU,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 8089 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.11 грн
14+ 21.21 грн
25+ 18.6 грн
100+ 11.29 грн
250+ 9.35 грн
500+ 7.48 грн
1000+ 5.64 грн
Мінімальне замовлення: 11
TLP5222(TP,E TLP5222_datasheet_en_20220722.pdf?did=143287&prodName=TLP5222
TLP5222(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.67V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 58ns, 57ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+237.62 грн
Мінімальне замовлення: 1500
TLP5222(TP,E TLP5222_datasheet_en_20220722.pdf?did=143287&prodName=TLP5222
TLP5222(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.67V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 58ns, 57ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+478.53 грн
10+ 334.43 грн
100+ 276.35 грн
500+ 227.13 грн
DF2B6M5SL,L3F DF2B6M5SL_datasheet_en_20191217.pdf?did=60620&prodName=DF2B6M5SL
DF2B6M5SL,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 26.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 26.5V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
товар відсутній
DF2B6M5SL,L3F DF2B6M5SL_datasheet_en_20191217.pdf?did=60620&prodName=DF2B6M5SL
DF2B6M5SL,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 26.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 26.5V (Typ)
Power - Peak Pulse: 37W
Power Line Protection: No
на замовлення 5010 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.64 грн
18+ 16.17 грн
100+ 7.89 грн
500+ 6.18 грн
1000+ 4.29 грн
2000+ 3.72 грн
5000+ 3.39 грн
Мінімальне замовлення: 13
TLP2761(D4-TP,E docget.jsp?did=28819&prodName=TLP2761
TLP2761(D4-TP,E
Виробник: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+28.66 грн
3000+ 26.22 грн
Мінімальне замовлення: 1500
TLP2761(D4-TP,E docget.jsp?did=28819&prodName=TLP2761
TLP2761(D4-TP,E
Виробник: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 15MBd
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 4345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+81.37 грн
10+ 49.24 грн
100+ 36.48 грн
500+ 31.45 грн
Мінімальне замовлення: 4
TLP2768A(TP,E
TLP2768A(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: ZSOL6ICTST20M,ACTIVE,
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
TLP2768A(TP,E
TLP2768A(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: ZSOL6ICTST20M,ACTIVE,
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+94.06 грн
10+ 56.94 грн
100+ 42.17 грн
500+ 36.37 грн
Мінімальне замовлення: 4
TLP2735(TP,E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+43.86 грн
Мінімальне замовлення: 1500
TLP2735(TP,E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+123.92 грн
10+ 75.41 грн
100+ 55.81 грн
500+ 48.13 грн
Мінімальне замовлення: 3
TLP2735(D4-TP,E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(D4-TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
товар відсутній
TLP2735(D4-TP,E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(D4-TP,E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
на замовлення 1470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+123.92 грн
10+ 75.41 грн
100+ 55.81 грн
500+ 48.13 грн
Мінімальне замовлення: 3
TLP2719(D4-TP,E TLP2719_datasheet_en_20180521.pdf?did=61847&prodName=TLP2719
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
товар відсутній
TLP2719(D4-TP,E TLP2719_datasheet_en_20180521.pdf?did=61847&prodName=TLP2719
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 1MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 800ns, 800ns
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 473 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+117.21 грн
10+ 71.39 грн
100+ 52.84 грн
Мінімальне замовлення: 3
TLP2770(D4-TP,E TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770
TLP2770(D4-TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRI-STATE S06L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+60.22 грн
Мінімальне замовлення: 1500
TLP2770(D4-TP,E TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770
TLP2770(D4-TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRI-STATE S06L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+150.8 грн
10+ 96.98 грн
100+ 74.65 грн
500+ 63.32 грн
Мінімальне замовлення: 2
TLP2735(E TLP2735_datasheet_en_20180119.pdf?did=58862&prodName=TLP2735
TLP2735(E
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER; HIGH-SPEED; IPM DR
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 15V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): -, 4ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Number of Channels: 1
Current - Output / Channel: 20 mA
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+123.92 грн
10+ 75.41 грн
125+ 55.81 грн
Мінімальне замовлення: 3
RN1423TE85LF docget.jsp?did=18798&prodName=RN1423
RN1423TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.79 грн
Мінімальне замовлення: 3000
RN1423TE85LF docget.jsp?did=18798&prodName=RN1423
RN1423TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 5822 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1424TE85LF docget.jsp?did=18798&prodName=RN1423
RN1424TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.79 грн
Мінімальне замовлення: 3000
RN1424TE85LF docget.jsp?did=18798&prodName=RN1423
RN1424TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 5280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1422TE85LF docget.jsp?did=18798&prodName=RN1423
RN1422TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.79 грн
6000+ 6.39 грн
9000+ 5.66 грн
Мінімальне замовлення: 3000
RN1422TE85LF docget.jsp?did=18798&prodName=RN1423
RN1422TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1421TE85LF docget.jsp?did=18798&prodName=RN1423
RN1421TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
товар відсутній
RN1421TE85LF docget.jsp?did=18798&prodName=RN1423
RN1421TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 2591 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1425TE85LF docget.jsp?did=18798&prodName=RN1423
RN1425TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
RN1425TE85LF docget.jsp?did=18798&prodName=RN1423
RN1425TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 1880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
1000+ 6.86 грн
Мінімальне замовлення: 10
RN1426TE85LF docget.jsp?did=18798&prodName=RN1423
RN1426TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
RN1426TE85LF docget.jsp?did=18798&prodName=RN1423
RN1426TE85LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.61 грн
14+ 20.99 грн
100+ 10.6 грн
500+ 8.81 грн
Мінімальне замовлення: 10
74LVC2T45FK,LF(CB
74LVC2T45FK,LF(CB
Виробник: Toshiba Semiconductor and Storage
Description: 1-BITX2 DUAL SUPPLYTRANSCVR,SOT-
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Supplier Device Package: US8
Output Type: Tri-State
Operating Temperature: -40°C ~ 125°C (TA)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.73 грн
6000+ 8.8 грн
Мінімальне замовлення: 3000
74LVC2T45FK,LF(CB
74LVC2T45FK,LF(CB
Виробник: Toshiba Semiconductor and Storage
Description: 1-BITX2 DUAL SUPPLYTRANSCVR,SOT-
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Supplier Device Package: US8
Output Type: Tri-State
Operating Temperature: -40°C ~ 125°C (TA)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.34 грн
11+ 26.67 грн
25+ 24.44 грн
100+ 17.06 грн
250+ 15.45 грн
500+ 12.79 грн
1000+ 9.44 грн
Мінімальне замовлення: 9
HDEPZ11GEA51
Виробник: Toshiba Semiconductor and Storage
Description: LINEAR IC
Packaging: Bulk
товар відсутній
HDEPZ11GEB51
Виробник: Toshiba Semiconductor and Storage
Description: LINEAR IC
Packaging: Bulk
товар відсутній
1N4148WS,H3F(B
1N4148WS,H3F(B
Виробник: Toshiba Semiconductor and Storage
Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: USC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.13 грн
Мінімальне замовлення: 3000
1N4148WS,H3F(B
1N4148WS,H3F(B
Виробник: Toshiba Semiconductor and Storage
Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: USC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 5844 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.94 грн
28+ 10.57 грн
29+ 10.06 грн
100+ 5.4 грн
250+ 4 грн
500+ 3.32 грн
1000+ 2.23 грн
Мінімальне замовлення: 25
TC74VCX08FTEL TC74VCX08FT_datasheet_en_20210518.pdf?did=21832&prodName=TC74VCX08FT
TC74VCX08FTEL
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
товар відсутній
TK40S06N1L,LQ
TK40S06N1L,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 88.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+60.47 грн
10+ 47.37 грн
100+ 36.82 грн
500+ 29.29 грн
Мінімальне замовлення: 5
TPH6R004PL,LQ TPH6R004PL_datasheet_en_20170525.pdf?did=55294&prodName=TPH6R004PL
TPH6R004PL,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 87A/49A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
товар відсутній
TPH6R004PL,LQ TPH6R004PL_datasheet_en_20170525.pdf?did=55294&prodName=TPH6R004PL
TPH6R004PL,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 87A/49A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+52.26 грн
10+ 43.42 грн
100+ 30.04 грн
500+ 23.55 грн
1000+ 20.05 грн
Мінімальне замовлення: 6
TK16V60W5,LVQ TK16V60W5_datasheet_en_20150115.pdf?did=15636&prodName=TK16V60W5
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+110.46 грн
Мінімальне замовлення: 2500
TK16V60W5,LVQ TK16V60W5_datasheet_en_20150115.pdf?did=15636&prodName=TK16V60W5
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+226.95 грн
10+ 183.46 грн
100+ 148.41 грн
500+ 123.81 грн
1000+ 106.01 грн
Мінімальне замовлення: 2
MS21X14X4.5W e_amo02_2014.pdf
MS21X14X4.5W
Виробник: Toshiba Semiconductor and Storage
Description: FERRITE CORE SOLID 12.8MM
Packaging: Bag
Mounting Type: Free Hanging
Length: 0.260" (6.60mm)
Type: Round
Design: Solid
Inner Dimension: 0.504" Dia (12.80mm)
Outer Dimension: 0.898" Dia (22.80mm)
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+342.66 грн
10+ 282.67 грн
25+ 275.94 грн
50+ 252.64 грн
100+ 189.48 грн
250+ 183.17 грн
500+ 173.95 грн
1000+ 165.25 грн
1N4148WT,L3F(B
Виробник: Toshiba Semiconductor and Storage
Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+1.66 грн
16000+ 1.39 грн
Мінімальне замовлення: 8000
1N4148WT,L3F(B
Виробник: Toshiba Semiconductor and Storage
Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
29+10.45 грн
32+ 9.06 грн
34+ 8.66 грн
100+ 4.66 грн
250+ 3.45 грн
500+ 2.86 грн
1000+ 1.92 грн
2500+ 1.63 грн
Мінімальне замовлення: 29
1N4148WT,H3F(B
Виробник: Toshiba Semiconductor and Storage
Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+1.84 грн
Мінімальне замовлення: 4000
1N4148WT,H3F(B
Виробник: Toshiba Semiconductor and Storage
Description: 100 V/0.25 A SWITCHING DIODE, SO
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 7970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
29+10.45 грн
32+ 9.06 грн
34+ 8.66 грн
100+ 4.66 грн
250+ 3.45 грн
500+ 2.86 грн
1000+ 1.92 грн
Мінімальне замовлення: 29
TLP241BP(D4TP1,E(O
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; OVP; OTP; VDE, SURFA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
товар відсутній
TLP241BP(D4TP1,E(O
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; OVP; OTP; VDE, SURFA
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.4 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
на замовлення 1460 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+220.23 грн
10+ 141.33 грн
100+ 108.75 грн
500+ 92.25 грн
Мінімальне замовлення: 2
TLP241BP(D4,E(O
Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; OVP; OTP; VDE, THROU
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1.4 A
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 80 V
On-State Resistance (Max): 280 mOhms
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+220.23 грн
10+ 141.33 грн
100+ 108.75 грн
Мінімальне замовлення: 2
TLP170J(TP,F) TLP170J_datasheet_en_20190617.pdf?did=324&prodName=TLP170J
TLP170J(TP,F)
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 90 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
товар відсутній
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