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TC7S02FU,LF TC7S02FU,LF Toshiba Semiconductor and Storage TC7S02FU_datasheet_en_20140301.pdf?did=20182&prodName=TC7S02FU Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
TC7S02FU,LF TC7S02FU,LF Toshiba Semiconductor and Storage TC7S02FU_datasheet_en_20140301.pdf?did=20182&prodName=TC7S02FU Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
12+26.88 грн
15+ 19.34 грн
25+ 16.88 грн
100+ 10.26 грн
250+ 8.5 грн
500+ 6.8 грн
1000+ 5.12 грн
Мінімальне замовлення: 12
CMS14(TE12L,Q,M) CMS14(TE12L,Q,M) Toshiba Semiconductor and Storage CMS14_datasheet_en_20181016.pdf?did=19430&prodName=CMS14 Description: DIODE SCHOTTKY 60V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
CMS14(TE12L,Q,M) CMS14(TE12L,Q,M) Toshiba Semiconductor and Storage CMS14_datasheet_en_20181016.pdf?did=19430&prodName=CMS14 Description: DIODE SCHOTTKY 60V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
8+40.31 грн
10+ 33.14 грн
100+ 22.93 грн
500+ 17.98 грн
1000+ 15.3 грн
Мінімальне замовлення: 8
CMS15(TE12L,Q,M) CMS15(TE12L,Q,M) Toshiba Semiconductor and Storage CMS15_datasheet_en_20180803.pdf?did=20252&prodName=CMS15 Description: DIODE SCHOTTKY 60V 3A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
товар відсутній
CMS15(TE12L,Q,M) CMS15(TE12L,Q,M) Toshiba Semiconductor and Storage CMS15_datasheet_en_20180803.pdf?did=20252&prodName=CMS15 Description: DIODE SCHOTTKY 60V 3A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
товар відсутній
TLP3127(F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1.3A 0-60V
Packaging: Tube
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.3 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 130 mOhms
товар відсутній
TLP3127(TP,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1.3A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.3 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 130 mOhms
товар відсутній
TPMD0001A-0005 Toshiba Semiconductor and Storage Description: TPMD0001A-0005
Packaging: Tape & Reel (TR)
Function: Electric Speed Controller (ESC)
Type: Power Management
Utilized IC / Part: TMPM475FYFGM, TPH1R204PL, TPMD0001A
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
товар відсутній
TJ50S06M3L(T6L1,NQ TJ50S06M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
товар відсутній
TJ50S06M3L(T6L1,NQ TJ50S06M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
3+126.16 грн
10+ 101.29 грн
100+ 80.65 грн
500+ 64.04 грн
1000+ 54.34 грн
Мінімальне замовлення: 3
TCR3UM28A,LF(SE TCR3UM28A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+6.04 грн
Мінімальне замовлення: 10000
TCR3UM28A,LF(SE TCR3UM28A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 25890 шт:
термін постачання 21-31 дні (днів)
10+31.35 грн
13+ 22.93 грн
25+ 20.65 грн
100+ 13.38 грн
250+ 11.27 грн
500+ 9.16 грн
1000+ 6.93 грн
2500+ 6.24 грн
5000+ 5.89 грн
Мінімальне замовлення: 10
SSM3K59CTB,L3F SSM3K59CTB,L3F Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 2A CST3B
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
товар відсутній
SSM3K59CTB,L3F SSM3K59CTB,L3F Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 2A CST3B
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
товар відсутній
MQ01ABD100V Toshiba Semiconductor and Storage Description: INTERNAL HARD DISK DRIVES
Packaging: Bulk
Size / Dimension: 100.00mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA II
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
товар відсутній
TC7SZ07AFS,L3J(T TC7SZ07AFS,L3J(T Toshiba Semiconductor and Storage Description: IC BUFFER NON-INVERT 5.5V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: fSV
товар відсутній
TCR2EN12,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=1.2V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EN12,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=1.2V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
на замовлення 9953 шт:
термін постачання 21-31 дні (днів)
12+26.13 грн
16+ 18.76 грн
25+ 16.97 грн
100+ 11 грн
250+ 9.26 грн
500+ 7.53 грн
1000+ 5.69 грн
2500+ 5.12 грн
5000+ 4.84 грн
Мінімальне замовлення: 12
RN4910FE,LXHF(CT RN4910FE,LXHF(CT Toshiba Semiconductor and Storage RN4910FE_datasheet_en_20210818.pdf?did=19037&prodName=RN4910FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+5.61 грн
8000+ 5.28 грн
Мінімальне замовлення: 4000
RN4910FE,LXHF(CT RN4910FE,LXHF(CT Toshiba Semiconductor and Storage RN4910FE_datasheet_en_20210818.pdf?did=19037&prodName=RN4910FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
12+25.38 грн
17+ 17.33 грн
100+ 8.75 грн
500+ 7.28 грн
1000+ 5.66 грн
2000+ 5.07 грн
Мінімальне замовлення: 12
TPHR7404PU,L1Q(M TPHR7404PU,L1Q(M Toshiba Semiconductor and Storage docget.jsp?did=69938&prodName=TPHR7404PU Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
товар відсутній
TPHR7404PU,L1Q(M TPHR7404PU,L1Q(M Toshiba Semiconductor and Storage docget.jsp?did=69938&prodName=TPHR7404PU Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
товар відсутній
TB62213AFG,C8,EL TB62213AFG,C8,EL Toshiba Semiconductor and Storage TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товар відсутній
TB62213AFG,C8,EL TB62213AFG,C8,EL Toshiba Semiconductor and Storage TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товар відсутній
AL14SXB60EE Toshiba Semiconductor and Storage ehdd-al14sxb-product-overview.pdf Description: AL14SX 600GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 600GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
товар відсутній
TK46A08N1,S4X TK46A08N1,S4X Toshiba Semiconductor and Storage TK46A08N1_datasheet_en_20140213.pdf?did=13149&prodName=TK46A08N1 Description: MOSFET N-CH 80V 46A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
5+69.43 грн
50+ 53.31 грн
Мінімальне замовлення: 5
2SJ438(AISIN,A,Q) 2SJ438(AISIN,A,Q) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438(AISIN,Q,M) 2SJ438(AISIN,Q,M) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438(CANO,Q,M) 2SJ438(CANO,Q,M) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438,MDKQ(J 2SJ438,MDKQ(J Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438,MDKQ(M 2SJ438,MDKQ(M Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438,Q(J 2SJ438,Q(J Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438,Q(M 2SJ438,Q(M Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
7UL1T34FS,LF(B Toshiba Semiconductor and Storage datasheet_en_20220203.pdf?did=141151 Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
товар відсутній
7UL1T34FS,LF(B Toshiba Semiconductor and Storage datasheet_en_20220203.pdf?did=141151 Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
товар відсутній
MN09ACA18T Toshiba Semiconductor and Storage cHDD-MN09-Product-Overview_r1a.pdf Description: MN09 NAS 18TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товар відсутній
TBD62304AFNG,EL TBD62304AFNG,EL Toshiba Semiconductor and Storage TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG Description: IC PWR DRIVER N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
3+111.23 грн
10+ 88.93 грн
100+ 70.75 грн
Мінімальне замовлення: 3
TC7MPB9307FT(EL) TC7MPB9307FT(EL) Toshiba Semiconductor and Storage Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2000+11.87 грн
6000+ 10.69 грн
10000+ 9.96 грн
Мінімальне замовлення: 2000
TC7MPB9307FT(EL) TC7MPB9307FT(EL) Toshiba Semiconductor and Storage Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 10708 шт:
термін постачання 21-31 дні (днів)
9+33.59 грн
11+ 27.68 грн
25+ 25.82 грн
100+ 19.38 грн
250+ 18 грн
500+ 15.23 грн
1000+ 11.57 грн
Мінімальне замовлення: 9
TC7SPB9307TU,LF(CT TC7SPB9307TU,LF(CT Toshiba Semiconductor and Storage TC7SPB9307TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9307TU Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
товар відсутній
TC7SPB9307TU,LF(CT TC7SPB9307TU,LF(CT Toshiba Semiconductor and Storage TC7SPB9307TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9307TU Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
на замовлення 2919 шт:
термін постачання 21-31 дні (днів)
11+29.11 грн
13+ 22.36 грн
25+ 20.47 грн
100+ 14.3 грн
250+ 12.96 грн
500+ 10.72 грн
1000+ 7.91 грн
Мінімальне замовлення: 11
TLP3145(TP,F TLP3145(TP,F Toshiba Semiconductor and Storage datasheet_en_20230620.pdf?did=59691 Description: SSR RELAY SPST-NO 400MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 400 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 2 Ohms
на замовлення 2598 шт:
термін постачання 21-31 дні (днів)
2+251.58 грн
10+ 171.31 грн
100+ 140.31 грн
500+ 111.01 грн
1000+ 101.82 грн
Мінімальне замовлення: 2
MKZ10V,LM(B MKZ10V,LM(B Toshiba Semiconductor and Storage Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
MKZ10V,LM(B MKZ10V,LM(B Toshiba Semiconductor and Storage Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
TPH2R805PL,LQ Toshiba Semiconductor and Storage TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
товар відсутній
TPH2R805PL,LQ Toshiba Semiconductor and Storage TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
4+79.88 грн
10+ 62.83 грн
100+ 48.86 грн
500+ 38.86 грн
1000+ 31.66 грн
Мінімальне замовлення: 4
74LCX541FT(AE) 74LCX541FT(AE) Toshiba Semiconductor and Storage Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOPB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+11.04 грн
5000+ 9.95 грн
Мінімальне замовлення: 2500
74LCX541FT(AE) 74LCX541FT(AE) Toshiba Semiconductor and Storage Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOPB
на замовлення 7232 шт:
термін постачання 21-31 дні (днів)
10+31.35 грн
12+ 25.74 грн
25+ 24.01 грн
100+ 18.03 грн
250+ 16.74 грн
500+ 14.16 грн
1000+ 10.76 грн
Мінімальне замовлення: 10
MG08SDP600A Toshiba Semiconductor and Storage eHDD-MG08-D_Product-Manual_r0.pdf Description: MG08 6TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товар відсутній
TPD4165K,F Toshiba Semiconductor and Storage Description: 600V, IPD, 3A, HDIP30
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
товар відсутній
TC74VHC08F(EL,K,F) TC74VHC08F(EL,K,F) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TC74VHC08FK(EL,K) TC74VHC08FK(EL,K) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TC74VHC08FK(EL,K) TC74VHC08FK(EL,K) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TC74VHC08FTELM TC74VHC08FTELM Toshiba Semiconductor and Storage TC74VHC08F,FN,FT,FK.pdf Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TC74VHC08FTELM TC74VHC08FTELM Toshiba Semiconductor and Storage TC74VHC08F,FN,FT,FK.pdf Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TPH8R808QM,LQ Toshiba Semiconductor and Storage Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
товар відсутній
TPH8R808QM,LQ Toshiba Semiconductor and Storage Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
товар відсутній
TK5P60W5,RVQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+36 грн
Мінімальне замовлення: 2000
TK5P60W5,RVQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
4+87.34 грн
10+ 68.58 грн
100+ 53.33 грн
500+ 42.42 грн
1000+ 34.56 грн
Мінімальне замовлення: 4
TC7S02FU,LF TC7S02FU_datasheet_en_20140301.pdf?did=20182&prodName=TC7S02FU
TC7S02FU,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
TC7S02FU,LF TC7S02FU_datasheet_en_20140301.pdf?did=20182&prodName=TC7S02FU
TC7S02FU,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.88 грн
15+ 19.34 грн
25+ 16.88 грн
100+ 10.26 грн
250+ 8.5 грн
500+ 6.8 грн
1000+ 5.12 грн
Мінімальне замовлення: 12
CMS14(TE12L,Q,M) CMS14_datasheet_en_20181016.pdf?did=19430&prodName=CMS14
CMS14(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
CMS14(TE12L,Q,M) CMS14_datasheet_en_20181016.pdf?did=19430&prodName=CMS14
CMS14(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.31 грн
10+ 33.14 грн
100+ 22.93 грн
500+ 17.98 грн
1000+ 15.3 грн
Мінімальне замовлення: 8
CMS15(TE12L,Q,M) CMS15_datasheet_en_20180803.pdf?did=20252&prodName=CMS15
CMS15(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 3A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
товар відсутній
CMS15(TE12L,Q,M) CMS15_datasheet_en_20180803.pdf?did=20252&prodName=CMS15
CMS15(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 3A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 102pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
товар відсутній
TLP3127(F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.3A 0-60V
Packaging: Tube
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.3 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 130 mOhms
товар відсутній
TLP3127(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.3A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.3 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 130 mOhms
товар відсутній
TPMD0001A-0005
Виробник: Toshiba Semiconductor and Storage
Description: TPMD0001A-0005
Packaging: Tape & Reel (TR)
Function: Electric Speed Controller (ESC)
Type: Power Management
Utilized IC / Part: TMPM475FYFGM, TPH1R204PL, TPMD0001A
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
товар відсутній
TJ50S06M3L(T6L1,NQ TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L
TJ50S06M3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
товар відсутній
TJ50S06M3L(T6L1,NQ TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L
TJ50S06M3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+126.16 грн
10+ 101.29 грн
100+ 80.65 грн
500+ 64.04 грн
1000+ 54.34 грн
Мінімальне замовлення: 3
TCR3UM28A,LF(SE
TCR3UM28A,LF(SE
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+6.04 грн
Мінімальне замовлення: 10000
TCR3UM28A,LF(SE
TCR3UM28A,LF(SE
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 25890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.35 грн
13+ 22.93 грн
25+ 20.65 грн
100+ 13.38 грн
250+ 11.27 грн
500+ 9.16 грн
1000+ 6.93 грн
2500+ 6.24 грн
5000+ 5.89 грн
Мінімальне замовлення: 10
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A CST3B
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
товар відсутній
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A CST3B
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
товар відсутній
MQ01ABD100V
Виробник: Toshiba Semiconductor and Storage
Description: INTERNAL HARD DISK DRIVES
Packaging: Bulk
Size / Dimension: 100.00mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA II
Operating Temperature: 0°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
товар відсутній
TC7SZ07AFS,L3J(T
TC7SZ07AFS,L3J(T
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: fSV
товар відсутній
TCR2EN12,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.2V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EN12,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.2V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
на замовлення 9953 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.13 грн
16+ 18.76 грн
25+ 16.97 грн
100+ 11 грн
250+ 9.26 грн
500+ 7.53 грн
1000+ 5.69 грн
2500+ 5.12 грн
5000+ 4.84 грн
Мінімальне замовлення: 12
RN4910FE,LXHF(CT RN4910FE_datasheet_en_20210818.pdf?did=19037&prodName=RN4910FE
RN4910FE,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+5.61 грн
8000+ 5.28 грн
Мінімальне замовлення: 4000
RN4910FE,LXHF(CT RN4910FE_datasheet_en_20210818.pdf?did=19037&prodName=RN4910FE
RN4910FE,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.38 грн
17+ 17.33 грн
100+ 8.75 грн
500+ 7.28 грн
1000+ 5.66 грн
2000+ 5.07 грн
Мінімальне замовлення: 12
TPHR7404PU,L1Q(M docget.jsp?did=69938&prodName=TPHR7404PU
TPHR7404PU,L1Q(M
Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
товар відсутній
TPHR7404PU,L1Q(M docget.jsp?did=69938&prodName=TPHR7404PU
TPHR7404PU,L1Q(M
Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9 S 0.65MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
товар відсутній
TB62213AFG,C8,EL TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG
TB62213AFG,C8,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товар відсутній
TB62213AFG,C8,EL TB62213AFG_datasheet_en_20150309.pdf?did=13013&prodName=TB62213AFG
TB62213AFG,C8,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.4A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товар відсутній
AL14SXB60EE ehdd-al14sxb-product-overview.pdf
Виробник: Toshiba Semiconductor and Storage
Description: AL14SX 600GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 600GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
товар відсутній
TK46A08N1,S4X TK46A08N1_datasheet_en_20140213.pdf?did=13149&prodName=TK46A08N1
TK46A08N1,S4X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 46A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.43 грн
50+ 53.31 грн
Мінімальне замовлення: 5
2SJ438(AISIN,A,Q) 2SJ438_2009-09-29.pdf
2SJ438(AISIN,A,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438(AISIN,Q,M) 2SJ438_2009-09-29.pdf
2SJ438(AISIN,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438(CANO,Q,M) 2SJ438_2009-09-29.pdf
2SJ438(CANO,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438,MDKQ(J 2SJ438_2009-09-29.pdf
2SJ438,MDKQ(J
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438,MDKQ(M 2SJ438_2009-09-29.pdf
2SJ438,MDKQ(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438,Q(J 2SJ438_2009-09-29.pdf
2SJ438,Q(J
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
2SJ438,Q(M 2SJ438_2009-09-29.pdf
2SJ438,Q(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товар відсутній
7UL1T34FS,LF(B datasheet_en_20220203.pdf?did=141151
Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
товар відсутній
7UL1T34FS,LF(B datasheet_en_20220203.pdf?did=141151
Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
товар відсутній
MN09ACA18T cHDD-MN09-Product-Overview_r1a.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MN09 NAS 18TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товар відсутній
TBD62304AFNG,EL TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG
TBD62304AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+111.23 грн
10+ 88.93 грн
100+ 70.75 грн
Мінімальне замовлення: 3
TC7MPB9307FT(EL)
TC7MPB9307FT(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+11.87 грн
6000+ 10.69 грн
10000+ 9.96 грн
Мінімальне замовлення: 2000
TC7MPB9307FT(EL)
TC7MPB9307FT(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 10708 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.59 грн
11+ 27.68 грн
25+ 25.82 грн
100+ 19.38 грн
250+ 18 грн
500+ 15.23 грн
1000+ 11.57 грн
Мінімальне замовлення: 9
TC7SPB9307TU,LF(CT TC7SPB9307TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9307TU
TC7SPB9307TU,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
товар відсутній
TC7SPB9307TU,LF(CT TC7SPB9307TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9307TU
TC7SPB9307TU,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
на замовлення 2919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.11 грн
13+ 22.36 грн
25+ 20.47 грн
100+ 14.3 грн
250+ 12.96 грн
500+ 10.72 грн
1000+ 7.91 грн
Мінімальне замовлення: 11
TLP3145(TP,F datasheet_en_20230620.pdf?did=59691
TLP3145(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 400 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 2 Ohms
на замовлення 2598 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+251.58 грн
10+ 171.31 грн
100+ 140.31 грн
500+ 111.01 грн
1000+ 101.82 грн
Мінімальне замовлення: 2
MKZ10V,LM(B
MKZ10V,LM(B
Виробник: Toshiba Semiconductor and Storage
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
MKZ10V,LM(B
MKZ10V,LM(B
Виробник: Toshiba Semiconductor and Storage
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
TPH2R805PL,LQ TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
товар відсутній
TPH2R805PL,LQ TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+79.88 грн
10+ 62.83 грн
100+ 48.86 грн
500+ 38.86 грн
1000+ 31.66 грн
Мінімальне замовлення: 4
74LCX541FT(AE)
74LCX541FT(AE)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOPB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+11.04 грн
5000+ 9.95 грн
Мінімальне замовлення: 2500
74LCX541FT(AE)
74LCX541FT(AE)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOPB
на замовлення 7232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.35 грн
12+ 25.74 грн
25+ 24.01 грн
100+ 18.03 грн
250+ 16.74 грн
500+ 14.16 грн
1000+ 10.76 грн
Мінімальне замовлення: 10
MG08SDP600A eHDD-MG08-D_Product-Manual_r0.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MG08 6TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товар відсутній
TPD4165K,F
Виробник: Toshiba Semiconductor and Storage
Description: 600V, IPD, 3A, HDIP30
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
товар відсутній
TC74VHC08F(EL,K,F)
TC74VHC08F(EL,K,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TC74VHC08FK(EL,K)
TC74VHC08FK(EL,K)
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TC74VHC08FK(EL,K)
TC74VHC08FK(EL,K)
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TC74VHC08FTELM TC74VHC08F,FN,FT,FK.pdf
TC74VHC08FTELM
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TC74VHC08FTELM TC74VHC08F,FN,FT,FK.pdf
TC74VHC08FTELM
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товар відсутній
TPH8R808QM,LQ
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
товар відсутній
TPH8R808QM,LQ
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
товар відсутній
TK5P60W5,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+36 грн
Мінімальне замовлення: 2000
TK5P60W5,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+87.34 грн
10+ 68.58 грн
100+ 53.33 грн
500+ 42.42 грн
1000+ 34.56 грн
Мінімальне замовлення: 4
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