Продукція > SHINDENGEN > Всі товари виробника SHINDENGEN (3660) > Сторінка 37 з 61
Фото | Назва | Виробник | Інформація |
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MTD2525J | SHINDENGEN | 2000 |
на замовлення 614 шт: термін постачання 14-28 дні (днів) |
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MV1001SC-5072 | Shindengen | LED Lighting Drivers LED Driver IC |
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MV1002SC-5072 | Shindengen | LED Lighting Drivers LED Driver IC |
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MV1011SC-5072 | Shindengen | Switching Controllers LED Driver Power IC MV series |
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MV1012SC-5072 | Shindengen | Switching Controllers LED Driver Power IC MV series |
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MV2002SG-3072 | Shindengen | LED Lighting Drivers LED Driver IC |
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MV2052SG-3072 | Shindengen | LED Lighting Drivers LED Driver IC |
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NSD03A40 | Shindengen |
на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
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NSD03C20 | SHINDENGEN |
на замовлення 1406 шт: термін постачання 14-28 дні (днів) |
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NSF03A60 | SHINDENGEN |
на замовлення 3750 шт: термін постачання 14-28 дні (днів) |
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P0R5B60HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Mounting: SMD Case: FB (TO252AA) Polarisation: unipolar Power dissipation: 35W Kind of package: reel; tape Gate charge: 4.3nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 2A Drain-source voltage: 600V Drain current: 0.5A On-state resistance: 10Ω Type of transistor: N-MOSFET |
на замовлення 2999 шт: термін постачання 21-30 дні (днів) |
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P0R5B60HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Mounting: SMD Case: FB (TO252AA) Polarisation: unipolar Power dissipation: 35W Kind of package: reel; tape Gate charge: 4.3nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 2A Drain-source voltage: 600V Drain current: 0.5A On-state resistance: 10Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 2999 шт: термін постачання 7-14 дні (днів) |
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P100FA7R5EN-5100 | Shindengen | MOSFET 75V, 100A EETMOS POWER MOSFET |
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P100FH4ENK-7071 | Shindengen | MOSFET EETMOS series Power MOSFET SMD |
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P100FP12SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W Mounting: SMD On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 238W Polarisation: unipolar Kind of package: reel; tape Gate charge: 164nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: FP (SC83 similar) Drain-source voltage: 120V Drain current: 100A |
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P100FP12SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W Mounting: SMD On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 238W Polarisation: unipolar Kind of package: reel; tape Gate charge: 164nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: FP (SC83 similar) Drain-source voltage: 120V Drain current: 100A кількість в упаковці: 1 шт |
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P105LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.7mΩ Pulsed drain current: 315A Power dissipation: 168W Gate charge: 76nC Polarisation: unipolar Technology: EETMOS4 Drain current: 105A Kind of channel: enhanced Drain-source voltage: 40V |
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P105LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.7mΩ Pulsed drain current: 315A Power dissipation: 168W Gate charge: 76nC Polarisation: unipolar Technology: EETMOS4 Drain current: 105A Kind of channel: enhanced Drain-source voltage: 40V кількість в упаковці: 1 шт |
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P105LF4QLK-5071 | SHINDENGEN | P105LF4QLK-5071 SMD N channel transistors |
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P105LF4QN-5071 | SHINDENGEN | P105LF4QN-5071 SMD N channel transistors |
на замовлення 25 шт: термін постачання 7-14 дні (днів) |
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P105LF4QNK-5071 | SHINDENGEN | P105LF4QNK-5071 SMD N channel transistors |
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P10B28HP2-5071 | SHINDENGEN | P10B28HP2-5071 SMD N channel transistors |
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P10F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 79W |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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P10F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
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P10F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 79W кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 7-14 дні (днів) |
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P10F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 600V Drain current: 10A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 85W |
на замовлення 348 шт: термін постачання 21-30 дні (днів) |
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P10F60HP2-5600 | Shindengen | MOSFET Mosfet |
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P10F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W Case: FTO-220AG (SC91) Mounting: THT Kind of package: bulk Drain-source voltage: 600V Drain current: 10A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Power dissipation: 85W кількість в упаковці: 1 шт |
на замовлення 348 шт: термін постачання 7-14 дні (днів) |
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P120LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Case: LF (MO235B similar) Mounting: SMD Type of transistor: N-MOSFET |
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P120LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Case: LF (MO235B similar) Mounting: SMD Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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P120LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Case: LF (MO235B similar) Mounting: SMD Type of transistor: N-MOSFET |
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P120LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Case: LF (MO235B similar) Mounting: SMD Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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P126FP10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W Polarisation: unipolar Pulsed drain current: 504A Power dissipation: 238W Gate charge: 160nC Technology: EETMOS3 Drain current: 126A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FP (SC83 similar) On-state resistance: 4.8mΩ Mounting: SMD |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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P126FP10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W Polarisation: unipolar Pulsed drain current: 504A Power dissipation: 238W Gate charge: 160nC Technology: EETMOS3 Drain current: 126A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: FP (SC83 similar) On-state resistance: 4.8mΩ Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 220 шт: термін постачання 7-14 дні (днів) |
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P126FP7R5SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FP (SC83 similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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P126FP7R5SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FP (SC83 similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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P12F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W Mounting: THT Case: FTO-220AG (SC91) Kind of package: bulk Type of transistor: N-MOSFET On-state resistance: 670mΩ Gate charge: 26.5nC Drain current: 12A Drain-source voltage: 600V Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A Polarisation: unipolar Power dissipation: 90W |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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P12F60HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
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P12F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W Mounting: THT Case: FTO-220AG (SC91) Kind of package: bulk Type of transistor: N-MOSFET On-state resistance: 670mΩ Gate charge: 26.5nC Drain current: 12A Drain-source voltage: 600V Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A Polarisation: unipolar Power dissipation: 90W кількість в упаковці: 1 шт |
на замовлення 350 шт: термін постачання 7-14 дні (днів) |
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P12FE7R5SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.6nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A Drain current: 12A On-state resistance: 63mΩ Type of transistor: N-MOSFET Drain-source voltage: 75V Application: automotive industry Power dissipation: 24W |
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P12FE7R5SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.6nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A Drain current: 12A On-state resistance: 63mΩ Type of transistor: N-MOSFET Drain-source voltage: 75V Application: automotive industry Power dissipation: 24W кількість в упаковці: 1 шт |
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P12LF10SLKD-5071 | SHINDENGEN |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 36A Power dissipation: 50W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 42mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
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P12LF10SLKD-5071 | SHINDENGEN |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 36A Power dissipation: 50W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 42mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P13F28HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 280V Drain current: 13A On-state resistance: 0.3Ω |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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P13F28HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 280V Drain current: 13A On-state resistance: 0.3Ω кількість в упаковці: 1 шт |
на замовлення 94 шт: термін постачання 7-14 дні (днів) |
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P13F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
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P13F50HP2-5600 | SHINDENGEN | P13F50HP2-5600 THT N channel transistors |
на замовлення 470 шт: термін постачання 7-14 дні (днів) |
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P13LA10EL-5070 | Shindengen | MOSFET 100V, 13A EETMOS POWER MOSFET |
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P13LA10EL-5070 | SHINDENGEN | P13LA10EL-5070 SMD N channel transistors |
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P140LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.42mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 122nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A |
на замовлення 4538 шт: термін постачання 21-30 дні (днів) |
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P140LF4QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.42mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 122nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A кількість в упаковці: 1 шт |
на замовлення 4538 шт: термін постачання 7-14 дні (днів) |
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P140LF4QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Application: automotive industry Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.42mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 122nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A |
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P140LF4QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Application: automotive industry Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.42mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 122nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A кількість в упаковці: 1 шт |
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P140LF4QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.48mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 96nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A |
на замовлення 4865 шт: термін постачання 21-30 дні (днів) |
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P140LF4QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.48mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 96nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A кількість в упаковці: 1 шт |
на замовлення 4865 шт: термін постачання 7-14 дні (днів) |
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P140LF4QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Application: automotive industry Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.48mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 96nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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P140LF4QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W Technology: EETMOS4 Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Power dissipation: 217W Application: automotive industry Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.48mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 96nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 560A кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 7-14 дні (днів) |
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P14FE6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.3nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A Drain current: 14A On-state resistance: 39mΩ Type of transistor: N-MOSFET Drain-source voltage: 60V Application: automotive industry Power dissipation: 24W |
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P14FE6SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.3nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A Drain current: 14A On-state resistance: 39mΩ Type of transistor: N-MOSFET Drain-source voltage: 60V Application: automotive industry Power dissipation: 24W кількість в упаковці: 1 шт |
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P15F50HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
товар відсутній |
MV1011SC-5072 |
Виробник: Shindengen
Switching Controllers LED Driver Power IC MV series
Switching Controllers LED Driver Power IC MV series
товар відсутній
MV1012SC-5072 |
Виробник: Shindengen
Switching Controllers LED Driver Power IC MV series
Switching Controllers LED Driver Power IC MV series
товар відсутній
P0R5B60HP2-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 51.1 грн |
10+ | 38.1 грн |
13+ | 28.47 грн |
25+ | 26.6 грн |
55+ | 15.24 грн |
150+ | 14.45 грн |
P0R5B60HP2-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 2999 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.32 грн |
6+ | 47.48 грн |
10+ | 34.16 грн |
25+ | 31.92 грн |
55+ | 18.29 грн |
150+ | 17.34 грн |
P100FP12SN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Mounting: SMD
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 164nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: FP (SC83 similar)
Drain-source voltage: 120V
Drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Mounting: SMD
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 164nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: FP (SC83 similar)
Drain-source voltage: 120V
Drain current: 100A
товар відсутній
P100FP12SN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Mounting: SMD
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 164nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: FP (SC83 similar)
Drain-source voltage: 120V
Drain current: 100A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 100A; Idm: 400A; 238W
Mounting: SMD
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 164nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: FP (SC83 similar)
Drain-source voltage: 120V
Drain current: 100A
кількість в упаковці: 1 шт
товар відсутній
P105LF4QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Pulsed drain current: 315A
Power dissipation: 168W
Gate charge: 76nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 105A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Pulsed drain current: 315A
Power dissipation: 168W
Gate charge: 76nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 105A
Kind of channel: enhanced
Drain-source voltage: 40V
товар відсутній
P105LF4QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Pulsed drain current: 315A
Power dissipation: 168W
Gate charge: 76nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 105A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 105A; Idm: 315A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Pulsed drain current: 315A
Power dissipation: 168W
Gate charge: 76nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 105A
Kind of channel: enhanced
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
P105LF4QN-5071 |
Виробник: SHINDENGEN
P105LF4QN-5071 SMD N channel transistors
P105LF4QN-5071 SMD N channel transistors
на замовлення 25 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.31 грн |
25+ | 40.55 грн |
68+ | 38.82 грн |
P10F50HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 61.82 грн |
17+ | 49.6 грн |
P10F50HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 10A; Idm: 40A; 79W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 500V
Drain current: 10A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 79W
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 89.19 грн |
5+ | 77.04 грн |
17+ | 59.52 грн |
47+ | 56.07 грн |
P10F60HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 85W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 85W
на замовлення 348 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 63.26 грн |
17+ | 51.04 грн |
45+ | 48.17 грн |
P10F60HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 85W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Power dissipation: 85W
кількість в упаковці: 1 шт
на замовлення 348 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91.04 грн |
5+ | 78.83 грн |
17+ | 61.25 грн |
45+ | 57.8 грн |
P120LF6GLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
товар відсутній
P120LF6GLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
P120LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
товар відсутній
P120LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Case: LF (MO235B similar)
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
P126FP10SN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Polarisation: unipolar
Pulsed drain current: 504A
Power dissipation: 238W
Gate charge: 160nC
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FP (SC83 similar)
On-state resistance: 4.8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Polarisation: unipolar
Pulsed drain current: 504A
Power dissipation: 238W
Gate charge: 160nC
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FP (SC83 similar)
On-state resistance: 4.8mΩ
Mounting: SMD
на замовлення 220 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 142.34 грн |
8+ | 107.83 грн |
22+ | 102.08 грн |
P126FP10SN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Polarisation: unipolar
Pulsed drain current: 504A
Power dissipation: 238W
Gate charge: 160nC
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FP (SC83 similar)
On-state resistance: 4.8mΩ
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 126A; Idm: 504A; 238W
Polarisation: unipolar
Pulsed drain current: 504A
Power dissipation: 238W
Gate charge: 160nC
Technology: EETMOS3
Drain current: 126A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FP (SC83 similar)
On-state resistance: 4.8mΩ
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 220 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 205.31 грн |
3+ | 177.38 грн |
8+ | 129.4 грн |
22+ | 122.5 грн |
240+ | 121.64 грн |
P126FP7R5SNK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FP (SC83 similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FP (SC83 similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
P126FP7R5SNK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FP (SC83 similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FP (SC83 similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FP (SC83 similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
P12F60HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
на замовлення 350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 82.84 грн |
6+ | 69.01 грн |
15+ | 57.51 грн |
40+ | 53.92 грн |
P12F60HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 12A; Idm: 48A; 90W
Mounting: THT
Case: FTO-220AG (SC91)
Kind of package: bulk
Type of transistor: N-MOSFET
On-state resistance: 670mΩ
Gate charge: 26.5nC
Drain current: 12A
Drain-source voltage: 600V
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Polarisation: unipolar
Power dissipation: 90W
кількість в упаковці: 1 шт
на замовлення 350 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 99.41 грн |
5+ | 86 грн |
15+ | 69.01 грн |
40+ | 64.7 грн |
500+ | 63.84 грн |
P12FE7R5SBK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.6nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain current: 12A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Application: automotive industry
Power dissipation: 24W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.6nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain current: 12A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Application: automotive industry
Power dissipation: 24W
товар відсутній
P12FE7R5SBK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.6nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain current: 12A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Application: automotive industry
Power dissipation: 24W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 12A; Idm: 36A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.6nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain current: 12A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Application: automotive industry
Power dissipation: 24W
кількість в упаковці: 1 шт
товар відсутній
P12LF10SLKD-5071 |
Виробник: SHINDENGEN
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P12LF10SLKD-5071 |
Виробник: SHINDENGEN
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 12A; Idm: 36A; 50W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P13F28HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 280V
Drain current: 13A
On-state resistance: 0.3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 280V
Drain current: 13A
On-state resistance: 0.3Ω
на замовлення 94 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 60.39 грн |
17+ | 50.32 грн |
46+ | 47.45 грн |
P13F28HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 280V
Drain current: 13A
On-state resistance: 0.3Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 13A; Idm: 52A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 280V
Drain current: 13A
On-state resistance: 0.3Ω
кількість в упаковці: 1 шт
на замовлення 94 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 86.4 грн |
5+ | 75.25 грн |
17+ | 60.39 грн |
46+ | 56.94 грн |
500+ | 56.07 грн |
P13F50HP2-5600 |
Виробник: SHINDENGEN
P13F50HP2-5600 THT N channel transistors
P13F50HP2-5600 THT N channel transistors
на замовлення 470 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91.97 грн |
16+ | 62.97 грн |
44+ | 59.52 грн |
P140LF4QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.42mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.42mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
на замовлення 4538 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 61.11 грн |
18+ | 48.17 грн |
48+ | 46.01 грн |
500+ | 45.29 грн |
P140LF4QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.42mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.42mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
кількість в упаковці: 1 шт
на замовлення 4538 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 87.33 грн |
5+ | 76.15 грн |
18+ | 57.8 грн |
48+ | 55.21 грн |
500+ | 54.35 грн |
P140LF4QLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.42mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.42mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
товар відсутній
P140LF4QLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.42mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.42mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
кількість в упаковці: 1 шт
товар відсутній
P140LF4QN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
на замовлення 4865 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 61.11 грн |
18+ | 48.17 грн |
48+ | 46.01 грн |
500+ | 45.29 грн |
P140LF4QN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
кількість в упаковці: 1 шт
на замовлення 4865 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 87.33 грн |
5+ | 76.15 грн |
18+ | 57.8 грн |
48+ | 55.21 грн |
500+ | 54.35 грн |
P140LF4QNK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 63.98 грн |
P140LF4QNK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 140A; Idm: 560A; 217W
Technology: EETMOS4
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Power dissipation: 217W
Application: automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.48mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 96nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 560A
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91.04 грн |
5+ | 79.73 грн |
17+ | 60.39 грн |
46+ | 56.94 грн |
P14FE6SBK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.3nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Drain current: 14A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Application: automotive industry
Power dissipation: 24W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.3nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Drain current: 14A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Application: automotive industry
Power dissipation: 24W
товар відсутній
P14FE6SBK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.3nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Drain current: 14A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Application: automotive industry
Power dissipation: 24W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 14A; Idm: 42A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.3nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Drain current: 14A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Application: automotive industry
Power dissipation: 24W
кількість в упаковці: 1 шт
товар відсутній