Продукція > SHINDENGEN > Всі товари виробника SHINDENGEN (3660) > Сторінка 42 з 61
Фото | Назва | Виробник | Інформація |
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P72LF7R5SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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P72LF7R5SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 72A Pulsed drain current: 288A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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P7F60HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
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P7F60HP2-5600 | SHINDENGEN | P7F60HP2-5600 THT N channel transistors |
на замовлення 494 шт: термін постачання 7-14 дні (днів) |
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P7F90VX3-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 7A Pulsed drain current: 21A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 42nC Kind of package: bulk Kind of channel: enhanced Application: automotive industry |
на замовлення 447 шт: термін постачання 21-30 дні (днів) |
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P7F90VX3-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 7A Pulsed drain current: 21A Power dissipation: 95W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 42nC Kind of package: bulk Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 447 шт: термін постачання 7-14 дні (днів) |
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P80FG6EA-5071 | SHINDENGEN | P80FG6EA-5071 SMD N channel transistors |
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P80FG6EAL-5071 | SHINDENGEN | P80FG6EAL-5071 SMD N channel transistors |
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P80FG7R5EN-5071 | SHINDENGEN | P80FG7R5EN-5071 SMD N channel transistors |
на замовлення 833 шт: термін постачання 7-14 дні (днів) |
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P80FH5ENK-7071 | Shindengen | MOSFET EETMOS series Power MOSFET SMD |
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P82F7R5SN-5600 | Shindengen | MOSFET EETMOS series Power MOSFET Through Hole |
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P82F7R5SN-5600 | SHINDENGEN | P82F7R5SN-5600 THT N channel transistors |
на замовлення 57 шт: термін постачання 7-14 дні (днів) |
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P85FG6EA-5071 | SHINDENGEN | P85FG6EA-5071 SMD N channel transistors |
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P85FG6EAL-5071 | SHINDENGEN | P85FG6EAL-5071 SMD N channel transistors |
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P85FH6EAL-7071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB) Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Case: FH (TO263AB) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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P85FH6EAL-7071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB) Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Case: FH (TO263AB) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P85GC28HP2F-5100 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 280V Drain current: 85A Power dissipation: 430W Case: GC (TO247AD); TO247AD Gate-source voltage: ±10V On-state resistance: 45mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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P85GC28HP2F-5100 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 280V Drain current: 85A Power dissipation: 430W Case: GC (TO247AD); TO247AD Gate-source voltage: ±10V On-state resistance: 45mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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P85W28HP2F-7071 | Shindengen | MOSFET Hi-PotMOS Power MOSFET Through Hole |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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P86F6SN-5600 | SHINDENGEN | P86F6SN-5600 THT N channel transistors |
на замовлення 80 шт: термін постачання 7-14 дні (днів) |
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P88FP10SN-5071 | SHINDENGEN | P88FP10SN-5071 SMD N channel transistors |
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P88FP10SNK-5071 | SHINDENGEN | P88FP10SNK-5071 SMD N channel transistors |
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P88LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
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P88LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD кількість в упаковці: 1 шт |
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P8B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Gate charge: 16.5nC |
на замовлення 1857 шт: термін постачання 21-30 дні (днів) |
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P8B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Gate charge: 16.5nC кількість в упаковці: 1 шт |
на замовлення 1857 шт: термін постачання 7-14 дні (днів) |
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P8B10SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 23W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 24A Gate charge: 16.5nC |
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P8B10SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 23W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 24A Gate charge: 16.5nC кількість в упаковці: 1 шт |
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P8B28HP2-5071 | SHINDENGEN | P8B28HP2-5071 SMD N channel transistors |
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P8B30HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 300V Drain current: 8A Pulsed drain current: 32A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced |
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P8B30HP2-5071 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
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P8B30HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 300V Drain current: 8A Pulsed drain current: 32A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P8F28HP2-5600 | Shindengen | MOSFET 280V, 8A EETMOS POWER MOSFET |
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P8F28HP2-5600 | SHINDENGEN | P8F28HP2-5600 THT N channel transistors |
на замовлення 97 шт: термін постачання 7-14 дні (днів) |
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P8F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 500V Drain current: 8A On-state resistance: 1Ω |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
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P8F50HP2-5600 | Shindengen | MOSFET Mosfet |
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P8F50HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 500V Drain current: 8A On-state resistance: 1Ω кількість в упаковці: 1 шт |
на замовлення 137 шт: термін постачання 7-14 дні (днів) |
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P8FE10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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P8FE10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P8FE10SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain current: 8A On-state resistance: 99mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Application: automotive industry Power dissipation: 24W |
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P8FE10SBK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain current: 8A On-state resistance: 99mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Application: automotive industry Power dissipation: 24W кількість в упаковці: 1 шт |
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P90FG5R5SL-5071 | Shindengen | MOSFET 55V, 90A EETMOS POWER MOSFET |
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P90FG5R5SL-5071 | SHINDENGEN | P90FG5R5SL-5071 SMD N channel transistors |
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P90LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
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P90LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD кількість в упаковці: 1 шт |
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P94FG5R5SL-5071 | SHINDENGEN | P94FG5R5SL-5071 SMD N channel transistors |
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P98LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced |
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P98LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P98LF6QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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P98LF6QLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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P98LF6QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced |
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P98LF6QN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P98LF6QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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P98LF6QNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W Type of transistor: N-MOSFET Technology: EETMOS4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 98A Pulsed drain current: 392A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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P9B30HP2F-5071 | SHINDENGEN | P9B30HP2F-5071 SMD N channel transistors |
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P9B40HP2 | Shindengen | MOSFET Mosfet |
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P9B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 9A Pulsed drain current: 36A Power dissipation: 40W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced |
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P9B40HP2-5071 | Shindengen | MOSFET Hi Voltage Low Noise |
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P9B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 9A Pulsed drain current: 36A Power dissipation: 40W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PB508AC | SHINDENGEN | 07+; |
на замовлення 500 шт: термін постачання 14-28 дні (днів) |
P72LF7R5SNK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
P72LF7R5SNK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 72A; Idm: 288A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 72A
Pulsed drain current: 288A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
P7F60HP2-5600 |
Виробник: SHINDENGEN
P7F60HP2-5600 THT N channel transistors
P7F60HP2-5600 THT N channel transistors
на замовлення 494 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.12 грн |
19+ | 52.17 грн |
52+ | 48.81 грн |
P7F90VX3-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 42nC
Kind of package: bulk
Kind of channel: enhanced
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 42nC
Kind of package: bulk
Kind of channel: enhanced
Application: automotive industry
на замовлення 447 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 109.5 грн |
5+ | 91.16 грн |
11+ | 74.33 грн |
31+ | 70.12 грн |
P7F90VX3-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 42nC
Kind of package: bulk
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 95W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 42nC
Kind of package: bulk
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 447 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 131.4 грн |
5+ | 113.6 грн |
11+ | 89.2 грн |
31+ | 84.15 грн |
P80FG7R5EN-5071 |
Виробник: SHINDENGEN
P80FG7R5EN-5071 SMD N channel transistors
P80FG7R5EN-5071 SMD N channel transistors
на замовлення 833 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.99 грн |
14+ | 73.21 грн |
37+ | 69 грн |
P82F7R5SN-5600 |
Виробник: SHINDENGEN
P82F7R5SN-5600 THT N channel transistors
P82F7R5SN-5600 THT N channel transistors
на замовлення 57 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 166.74 грн |
10+ | 104.34 грн |
26+ | 99.29 грн |
P85FH6EAL-7071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FH (TO263AB)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FH (TO263AB)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P85FH6EAL-7071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FH (TO263AB)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FH (TO263AB)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FH (TO263AB)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P85GC28HP2F-5100 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 85A
Power dissipation: 430W
Case: GC (TO247AD); TO247AD
Gate-source voltage: ±10V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 85A
Power dissipation: 430W
Case: GC (TO247AD); TO247AD
Gate-source voltage: ±10V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 299.8 грн |
5+ | 199.15 грн |
12+ | 188.63 грн |
P85GC28HP2F-5100 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 85A
Power dissipation: 430W
Case: GC (TO247AD); TO247AD
Gate-source voltage: ±10V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 280V; 85A; 430W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 280V
Drain current: 85A
Power dissipation: 430W
Case: GC (TO247AD); TO247AD
Gate-source voltage: ±10V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 359.76 грн |
5+ | 248.17 грн |
12+ | 226.35 грн |
P85W28HP2F-7071 |
Виробник: Shindengen
MOSFET Hi-PotMOS Power MOSFET Through Hole
MOSFET Hi-PotMOS Power MOSFET Through Hole
на замовлення 15 шт:
термін постачання 21-30 дні (днів)P86F6SN-5600 |
Виробник: SHINDENGEN
P86F6SN-5600 THT N channel transistors
P86F6SN-5600 THT N channel transistors
на замовлення 80 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 166.74 грн |
10+ | 104.34 грн |
26+ | 99.29 грн |
P88LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
товар відсутній
P88LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
P8B10SB-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
на замовлення 1857 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 23.18 грн |
25+ | 19.49 грн |
53+ | 15.55 грн |
144+ | 14.71 грн |
P8B10SB-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
кількість в упаковці: 1 шт
на замовлення 1857 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 27.82 грн |
25+ | 24.29 грн |
53+ | 18.66 грн |
144+ | 17.65 грн |
3000+ | 17.33 грн |
P8B10SBK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
товар відсутній
P8B10SBK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
кількість в упаковці: 1 шт
товар відсутній
P8B30HP2-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P8B30HP2-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P8F28HP2-5600 |
Виробник: SHINDENGEN
P8F28HP2-5600 THT N channel transistors
P8F28HP2-5600 THT N channel transistors
на замовлення 97 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 68.51 грн |
22+ | 44.6 грн |
61+ | 42.07 грн |
P8F50HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 1Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 1Ω
на замовлення 137 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.69 грн |
9+ | 40.25 грн |
25+ | 36.25 грн |
29+ | 28.75 грн |
78+ | 27.35 грн |
P8F50HP2-5600 |
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 15nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
на замовлення 137 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.43 грн |
6+ | 50.16 грн |
25+ | 43.5 грн |
29+ | 34.5 грн |
78+ | 32.82 грн |
P8FE10SB-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P8FE10SB-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar)
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P8FE10SBK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
товар відсутній
P8FE10SBK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W
Kind of package: reel; tape
Polarisation: unipolar
Case: FE (TO252AB similar)
Mounting: SMD
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Application: automotive industry
Power dissipation: 24W
кількість в упаковці: 1 шт
товар відсутній
P90LF6GLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
товар відсутній
P90LF6GLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
P98LF6QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P98LF6QL-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P98LF6QLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
P98LF6QLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
P98LF6QN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P98LF6QN-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
P98LF6QNK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
P98LF6QNK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 98A; Idm: 392A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 98A
Pulsed drain current: 392A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
P9B40HP2-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 40W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 40W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
P9B40HP2-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 40W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 9A; Idm: 36A; 40W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 40W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній