Продукція > SHINDENGEN > Всі товари виробника SHINDENGEN (3660) > Сторінка 40 з 61
| Фото | Назва | Виробник | Інформація |
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P40B10SL-5071 | SHINDENGEN |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 40A On-state resistance: 18.5mΩ Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Gate charge: 66nC кількість в упаковці: 1 шт |
на замовлення 2022 шт: термін постачання 7-14 дні (днів) |
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P40B10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 40A On-state resistance: 16.8mΩ Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Gate charge: 56nC |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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P40B10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 40A On-state resistance: 16.8mΩ Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Gate charge: 56nC кількість в упаковці: 1 шт |
на замовлення 2995 шт: термін постачання 7-14 дні (днів) |
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P40B6SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W Technology: EETMOS3 Mounting: SMD Case: FB (TO252AA) Kind of package: reel; tape Power dissipation: 44W Polarisation: unipolar Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Drain-source voltage: 60V Drain current: 40A On-state resistance: 12mΩ Type of transistor: N-MOSFET |
на замовлення 1177 шт: термін постачання 21-30 дні (днів) |
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P40B6SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W Technology: EETMOS3 Mounting: SMD Case: FB (TO252AA) Kind of package: reel; tape Power dissipation: 44W Polarisation: unipolar Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Drain-source voltage: 60V Drain current: 40A On-state resistance: 12mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 1177 шт: термін постачання 7-14 дні (днів) |
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P40F10SN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 160A; 44W Mounting: THT Drain-source voltage: 100V Drain current: 40A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 44W Polarisation: unipolar Kind of package: bulk Gate charge: 92nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Case: FTO-220AG (SC91) |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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P40F10SN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 160A; 44W Mounting: THT Drain-source voltage: 100V Drain current: 40A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 44W Polarisation: unipolar Kind of package: bulk Gate charge: 92nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Case: FTO-220AG (SC91) кількість в упаковці: 1 шт |
на замовлення 136 шт: термін постачання 7-14 дні (днів) |
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P40F12SN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W Mounting: THT Drain-source voltage: 120V Drain current: 40A On-state resistance: 11.9mΩ Type of transistor: N-MOSFET Power dissipation: 51W Polarisation: unipolar Kind of package: bulk Gate charge: 117nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Case: FTO-220AG (SC91) |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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| P40F12SN-5600 | Shindengen |
MOSFET EETMOS series Power MOSFET Through Hole |
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P40F12SN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W Mounting: THT Drain-source voltage: 120V Drain current: 40A On-state resistance: 11.9mΩ Type of transistor: N-MOSFET Power dissipation: 51W Polarisation: unipolar Kind of package: bulk Gate charge: 117nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Case: FTO-220AG (SC91) кількість в упаковці: 1 шт |
на замовлення 84 шт: термін постачання 7-14 дні (днів) |
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P40LF12SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 40A Pulsed drain current: 160A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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P40LF12SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 40A Pulsed drain current: 160A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 98 шт: термін постачання 7-14 дні (днів) |
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| P40LF12SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 40A Pulsed drain current: 160A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| P40LF12SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 40A Pulsed drain current: 160A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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P40LF12SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 40A Pulsed drain current: 160A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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P40LF12SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 40A Pulsed drain current: 160A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 95 шт: термін постачання 7-14 дні (днів) |
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| P40LF12SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 40A Pulsed drain current: 160A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| P40LF12SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 40A Pulsed drain current: 160A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| P41LF4QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 123A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 41A Pulsed drain current: 123A Power dissipation: 50W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
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| P41LF4QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 123A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 41A Pulsed drain current: 123A Power dissipation: 50W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P42F6EN-5600 | Shindengen |
MOSFET 60V, 42A EETMOS POWER MOSFET |
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| P42F6EN-5600 | SHINDENGEN | P42F6EN-5600 THT N channel transistors |
на замовлення 487 шт: термін постачання 7-14 дні (днів) |
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| P46LF7R5SL-5071 | SHINDENGEN | P46LF7R5SL-5071 SMD N channel transistors |
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| P46LF7R5SLK-5071 | SHINDENGEN | P46LF7R5SLK-5071 SMD N channel transistors |
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| P46LF7R5SN-5071 | SHINDENGEN | P46LF7R5SN-5071 SMD N channel transistors |
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| P46LF7R5SNK-5071 | SHINDENGEN | P46LF7R5SNK-5071 SMD N channel transistors |
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| P4B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 4A Pulsed drain current: 16A Power dissipation: 35W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| P4B40HP2-5071 | Shindengen |
MOSFET Hi-PotMOS series Power MOSFET SMD |
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| P4B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 4A Pulsed drain current: 16A Power dissipation: 35W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P4B60HP2F-5071 | SHINDENGEN | P4B60HP2F-5071 SMD N channel transistors |
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P4F60HP2-5600 | Shindengen | MOSFET Mosfet |
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| P4F60HP2-5600 | SHINDENGEN | P4F60HP2-5600 THT N channel transistors |
на замовлення 500 шт: термін постачання 7-14 дні (днів) |
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| P4F90VX3-5600 | SHINDENGEN | P4F90VX3-5600 THT N channel transistors |
на замовлення 435 шт: термін постачання 7-14 дні (днів) |
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| P50B4EA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 200A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced |
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| P50B4EA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 200A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P50B6EA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA) Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Case: FB (TO252AA) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| P50B6EA-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA) Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Case: FB (TO252AA) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P50F10SN-5600 | SHINDENGEN | P50F10SN-5600 THT N channel transistors |
на замовлення 263 шт: термін постачання 7-14 дні (днів) |
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| P50LF10SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
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| P50LF10SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P50LF10SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| P50LF10SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| P50LF10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
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| P50LF10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P50LF10SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| P50LF10SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| P50LF4QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 150A Power dissipation: 62W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
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| P50LF4QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 150A Power dissipation: 62W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P54B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Pulsed drain current: 162A Power dissipation: 44W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
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| P54B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Pulsed drain current: 162A Power dissipation: 44W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P55F6EN-5600 | Shindengen |
MOSFET 60V, 55A EETMOS POWER MOSFET |
товар відсутній |
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| P55F6EN-5600 | SHINDENGEN | P55F6EN-5600 THT N channel transistors |
на замовлення 63 шт: термін постачання 7-14 дні (днів) |
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| P56LA4SN-5070 | SHINDENGEN | P56LA4SN-5070 SMD N channel transistors |
товар відсутній |
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| P58LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
товар відсутній |
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| P58LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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| P58LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
товар відсутній |
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| P58LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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| P5B50HP2F-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA) Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±10V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| P5B50HP2F-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA) Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±10V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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P5B52HP2-5071 | Shindengen |
MOSFET Hi Voltage Low Noise |
товар відсутній |
| P40B10SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 18.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Gate charge: 66nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 18.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Gate charge: 66nC
кількість в упаковці: 1 шт
на замовлення 2022 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 54.83 грн |
| 24+ | 42.27 грн |
| 66+ | 39.68 грн |
| 500+ | 39.08 грн |
| P40B10SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 16.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Gate charge: 56nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 16.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Gate charge: 56nC
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.45 грн |
| 9+ | 42.27 грн |
| 25+ | 33.79 грн |
| 69+ | 31.63 грн |
| 500+ | 31.27 грн |
| P40B10SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 16.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Gate charge: 56nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 16.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Gate charge: 56nC
кількість в упаковці: 1 шт
на замовлення 2995 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.54 грн |
| 6+ | 52.68 грн |
| 25+ | 40.55 грн |
| 69+ | 37.96 грн |
| 500+ | 37.53 грн |
| P40B6SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
на замовлення 1177 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.93 грн |
| 25+ | 30.98 грн |
| 35+ | 24.64 грн |
| 94+ | 23.29 грн |
| P40B6SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 1177 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.31 грн |
| 25+ | 38.61 грн |
| 35+ | 29.57 грн |
| 94+ | 27.95 грн |
| 3000+ | 27.52 грн |
| P40F10SN-5600 |
|
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 160A; 44W
Mounting: THT
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 44W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 92nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 160A; 44W
Mounting: THT
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 44W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 92nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.29 грн |
| 6+ | 67.58 грн |
| 17+ | 51.04 грн |
| 45+ | 48.17 грн |
| P40F10SN-5600 |
|
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 160A; 44W
Mounting: THT
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 44W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 92nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 160A; 44W
Mounting: THT
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 44W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 92nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
кількість в упаковці: 1 шт
на замовлення 136 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 97.55 грн |
| 5+ | 84.21 грн |
| 17+ | 61.25 грн |
| 45+ | 57.8 грн |
| P40F12SN-5600 |
|
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W
Mounting: THT
Drain-source voltage: 120V
Drain current: 40A
On-state resistance: 11.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 117nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W
Mounting: THT
Drain-source voltage: 120V
Drain current: 40A
On-state resistance: 11.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 117nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.55 грн |
| 5+ | 81.95 грн |
| 14+ | 61.82 грн |
| 37+ | 58.23 грн |
| P40F12SN-5600 |
|
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W
Mounting: THT
Drain-source voltage: 120V
Drain current: 40A
On-state resistance: 11.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 117nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W
Mounting: THT
Drain-source voltage: 120V
Drain current: 40A
On-state resistance: 11.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 117nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
кількість в упаковці: 1 шт
на замовлення 84 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.06 грн |
| 5+ | 102.13 грн |
| 14+ | 74.19 грн |
| 37+ | 69.88 грн |
| P40LF12SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.42 грн |
| 6+ | 64.7 грн |
| 18+ | 48.17 грн |
| 48+ | 46.01 грн |
| P40LF12SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 98 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 92.9 грн |
| 5+ | 80.63 грн |
| 18+ | 57.8 грн |
| 48+ | 55.21 грн |
| P40LF12SLK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| P40LF12SLK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| P40LF12SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.42 грн |
| 6+ | 64.7 грн |
| 18+ | 48.17 грн |
| 48+ | 46.01 грн |
| P40LF12SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 95 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 92.9 грн |
| 5+ | 80.63 грн |
| 18+ | 57.8 грн |
| 48+ | 55.21 грн |
| P40LF12SNK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| P40LF12SNK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| P41LF4QTKD-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 123A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 123A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P41LF4QTKD-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 123A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 41A; Idm: 123A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 41A
Pulsed drain current: 123A
Power dissipation: 50W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P42F6EN-5600 |
Виробник: SHINDENGEN
P42F6EN-5600 THT N channel transistors
P42F6EN-5600 THT N channel transistors
на замовлення 487 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.61 грн |
| 28+ | 37.09 грн |
| 75+ | 34.51 грн |
| P4B40HP2-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 35W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 35W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P4B40HP2-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 35W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 35W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P4F60HP2-5600 |
Виробник: SHINDENGEN
P4F60HP2-5600 THT N channel transistors
P4F60HP2-5600 THT N channel transistors
на замовлення 500 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.8 грн |
| 27+ | 37.96 грн |
| 74+ | 35.37 грн |
| P4F90VX3-5600 |
Виробник: SHINDENGEN
P4F90VX3-5600 THT N channel transistors
P4F90VX3-5600 THT N channel transistors
на замовлення 435 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.75 грн |
| 19+ | 55.21 грн |
| 50+ | 52.62 грн |
| P50B4EA-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P50B4EA-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P50B6EA-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P50B6EA-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P50F10SN-5600 |
Виробник: SHINDENGEN
P50F10SN-5600 THT N channel transistors
P50F10SN-5600 THT N channel transistors
на замовлення 263 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.06 грн |
| 14+ | 74.19 грн |
| 38+ | 69.88 грн |
| P50LF10SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P50LF10SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P50LF10SLK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| P50LF10SLK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| P50LF10SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P50LF10SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P50LF10SNK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| P50LF10SNK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| P50LF4QTKD-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P50LF4QTKD-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P54B4SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 162A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 162A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P54B4SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 162A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 162A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P55F6EN-5600 |
Виробник: SHINDENGEN
P55F6EN-5600 THT N channel transistors
P55F6EN-5600 THT N channel transistors
на замовлення 63 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.98 грн |
| 16+ | 66.43 грн |
| 42+ | 62.97 грн |
| P58LF6GLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
товар відсутній
| P58LF6GLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| P58LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
товар відсутній
| P58LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| P5B50HP2F-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P5B50HP2F-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній